IPB80P03P4L-04 Infineon Technologies, IPB80P03P4L-04 Datasheet - Page 7

• Manufacturer Part Number: IPB80P03P4L-04
• Description: MOSFET P-CH 30V 80A TO263-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB80P03P4L-04

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.1 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2V @ 253µA
• Gate Charge (qg) @ Vgs: 160nC @ 10V
• Input Capacitance (ciss) @ Vds: 11300pF @ 25V
• Power - Max: 137W
• Mounting Type: Surface Mount
• Package / Case: TO-263-2, D²Pak (2 leads + Tab), TO-263AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev. 1.0
13 Avalanche energy
E
parameter: I
15 Typ. gate charge
V
parameter: V
AS
GS
1000
= f(T
= f(Q
800
600
400
200
12
10
0
8
6
4
2
0
25
0
j
)
gate
20 A
40 A
80 A
D
); I
DD
20
D
= -80 A pulsed
40
75
Q
60
T
gate
j
[°C]
[nC]
80
125
100
-6V
120
-24V
140
175
page 7
14 Drain-source breakdown voltage
V
16 Gate charge waveforms
BR(DSS)
V
V
GS
GS
33
32
31
30
29
28
-60
= f(T
Q
Q
gs
gs
j
IPI80P03P4L-04, IPP80P03P4L-04
); I
-20
D
= -1 mA
Q
Q
20
g
g
Q
Q
T
gd
gd
j
60
[°C]
IPB80P03P4L-04
100
Q
Q
gate
gate
140
2008-07-29
180