IPB80P03P4L-04 Infineon Technologies, IPB80P03P4L-04 Datasheet - Page 4

• Manufacturer Part Number: IPB80P03P4L-04
• Description: MOSFET P-CH 30V 80A TO263-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB80P03P4L-04

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.1 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2V @ 253µA
• Gate Charge (qg) @ Vgs: 160nC @ 10V
• Input Capacitance (ciss) @ Vds: 11300pF @ 25V
• Power - Max: 137W
• Mounting Type: Surface Mount
• Package / Case: TO-263-2, D²Pak (2 leads + Tab), TO-263AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev. 1.0
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
= f(V
= f(T
1000
160
140
120
100
100
80
60
40
20
10
0
1
DS
0.1
0
C
); T
); V
p
C
GS
= 25 °C; D = 0; SMD
≤ -6V
50
1
-V
T
C
100
DS
[°C]
1 ms
[V]
100 µs
10
10 µs
150
1 µs
200
100
page 4
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
= f(T
100
10
10
10
= f(t
10
10
80
60
40
20
0
-1
-2
-3
1
0
C
10
); V
0
p
-6
)
0.05
0.01
0.1
single pulse
0.5
GS
IPI80P03P4L-04, IPP80P03P4L-04
10
≤ -6V; SMD
p
/T
-5
50
10
-4
T
t
C
100
10
p
[°C]
[s]
-3
IPB80P03P4L-04
10
-2
150
10
2008-07-29
-1
200
10
0