IPB080N06N G Infineon Technologies, IPB080N06N G Datasheet

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IPB080N06N G

Manufacturer Part Number
IPB080N06N G
Description
MOSFET N-CH 60V 80A TO-263
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPB080N06N G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7.7 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 150µA
Gate Charge (qg) @ Vgs
93nC @ 10V
Input Capacitance (ciss) @ Vds
3500pF @ 30V
Power - Max
214W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.008 Ohms
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
80 A
Power Dissipation
214 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPB080N06N G
IPB080N06NGINTR
IPB080N06NGXT
SP000204174
Features
Maximum ratings,
Parameter
Type
Package
Marking
Power-Transistor
v t
T
R
Symbol Conditions
I
I
E
V
P
T T
v t
T
T
T
I
I
T
T
i t
R
V
Product Summary
V
R
I
IPB080N06N G
Value
IPP080N06N G
Unit

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IPB080N06N G Summary of contents

Page 1

... Power-Transistor Features Type Package Marking Maximum ratings, T Parameter v t IPB080N06N G Product Summary Symbol Conditions IPP080N06N G Value Unit ...

Page 2

... Parameter Thermal characteristics Electrical characteristics, T Static characteristics IPB080N06N G Symbol Conditions IPP080N06N G Values Unit min. typ. max. ...

Page 3

... Parameter Dynamic characteristics Reverse Diode IPB080N06N G Symbol Conditions IPP080N06N G Values Unit min. typ. max. ...

Page 4

... Power dissipation P T 250 200 150 100 100 T [° Safe operating area [V] DS IPB080N06N G 2 Drain current 150 200 0 4 Max. transient thermal impedance IPP080N06N G 50 100 150 T [° [s] p 200 0 10 ...

Page 5

... Typ. output characteristics 240 220 200 180 160 140 120 100 [ Typ. transfer characteristics 140 120 100 [ Typ. drain-source on resistance Typ. forward transconductance 100 IPB080N06N G IPP080N06N 100 120 ...

Page 6

... Drain-source on-state resistance -60 - [° Typ. capacitances [ Typ. gate threshold voltage 3.5 3 2.5 2 1.5 1 0.5 0 100 140 180 -60 12 Forward characteristics of reverse diode IPB080N06N G IPP080N06N - 100 140 T [°C] j 0 [V] SD 180 2.5 ...

Page 7

... Avalanche characteristics [µ Drain-source breakdown voltage -60 - [° Typ. gate charge Gate charge waveforms 100 140 180 IPB080N06N G IPP080N06N [nC] gate ate ...

Page 8

... PG-TO-263 (D²-Pak) PG-TO-263 (D²-Pak) IPB080N06N G IPP080N06N G ...

Page 9

... PG-TO220-3: Outline IPB080N06N G IPP080N06N G ...

Page 10

... IPB080N06N G IPP080N06N G ...

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