IPB080N06N G Infineon Technologies, IPB080N06N G Datasheet - Page 7

• Manufacturer Part Number: IPB080N06N G
• Description: MOSFET N-CH 60V 80A TO-263
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB080N06N G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.7 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 150µA
• Gate Charge (qg) @ Vgs: 93nC @ 10V
• Input Capacitance (ciss) @ Vds: 3500pF @ 30V
• Power - Max: 214W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.008 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 214 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPB080N06N G; IPB080N06NGINTR; IPB080N06NGXT; SP000204174

13 Avalanche characteristics
I
15 Drain-source breakdown voltage
V
10
10
10
t
75
70
65
60
55
50
2
1
0
-60
10
0
R
T
T
I
-20
10
20
1
t
T
AV
j
60
[°C]
[µs]
100
10
2
140
180
10
3
14 Typ. gate charge
V
16 Gate charge waveforms
Q
V
12
10
V
Q
8
6
4
2
0
0
V
I
IPB080N06N G
Q
20
Q
Q
gate
g
Q
40
[nC]
Q
IPP080N06N G
60
Q
g ate
80