IPB080N06N G Infineon Technologies, IPB080N06N G Datasheet - Page 5

• Manufacturer Part Number: IPB080N06N G
• Description: MOSFET N-CH 60V 80A TO-263
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB080N06N G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.7 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 150µA
• Gate Charge (qg) @ Vgs: 93nC @ 10V
• Input Capacitance (ciss) @ Vds: 3500pF @ 30V
• Power - Max: 214W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.008 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 214 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPB080N06N G; IPB080N06NGINTR; IPB080N06NGXT; SP000204174

5 Typ. output characteristics
I
7 Typ. transfer characteristics
I
V
V
240
220
200
180
160
140
120
100
140
120
100
80
60
40
20
80
60
40
20
0
0
0
0
T
V
V
T
1
1
I R
2
2
3
V
V
DS
GS
[V]
[V]
4
3
5
4
6
5
7
6 Typ. drain-source on resistance
R
8 Typ. forward transconductance
g
100
I
30
28
26
24
22
20
18
16
14
12
10
80
60
40
20
8
6
4
2
0
0
0
0
I
T
V
T
IPB080N06N G
20
20
40
60
I
I
D
D
40
[A]
[A]
80
IPP080N06N G
60
100
120
80