IPB080N06N G Infineon Technologies, IPB080N06N G Datasheet - Page 4

• Manufacturer Part Number: IPB080N06N G
• Description: MOSFET N-CH 60V 80A TO-263
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB080N06N G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.7 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 150µA
• Gate Charge (qg) @ Vgs: 93nC @ 10V
• Input Capacitance (ciss) @ Vds: 3500pF @ 30V
• Power - Max: 214W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.008 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 214 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPB080N06N G; IPB080N06NGINTR; IPB080N06NGXT; SP000204174

1 Power dissipation
P
3 Safe operating area
I
V
250
200
150
100
10
10
10
10
10
50
T
0
-1
3
2
1
0
10
0
-1
T
t
50
D
10
0
T
V
C
DS
100
[°C]
[V]
10
1
150
200
10
2
2 Drain current
I
4 Max. transient thermal impedance
Z
T
10
10
10
90
80
70
60
50
40
30
20
10
0
-1
-2
t
0
10
0
V
-5
D t T
IPB080N06N G
10
-4
50
10
-3
T
t
C
100
p
[°C]
[s]
10
-2
IPP080N06N G
150
10
-1
200
10
0