IPP100P03P3L-04

Manufacturer Part NumberIPP100P03P3L-04
DescriptionMOSFET P-CH 30V 100A TO220-3
ManufacturerInfineon Technologies
SeriesOptiMOS™
IPP100P03P3L-04 datasheet
 


Specifications of IPP100P03P3L-04

Fet TypeMOSFET P-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs4.3 mOhm @ 80A, 10VDrain To Source Voltage (vdss)30V
Current - Continuous Drain (id) @ 25° C100AVgs(th) (max) @ Id2.1V @ 475µA
Gate Charge (qg) @ Vgs200nC @ 10VInput Capacitance (ciss) @ Vds9300pF @ 25V
Power - Max200WMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)Lead Free Status / RoHS StatusLead free / RoHS Compliant
Other namesSP000311114  
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OptiMOS
®
-P Trench Power-Transistor
Features
• P-channel - Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS Compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
• Intended for reverse battery protection
Type
Package
IPB100P03P3L-04
PG-TO263-3-2
IPI100P03P3L-04
PG-TO262-3-1
IPP100P03P3L-04
PG-TO220-3-1
Maximum ratings, at T
=25 °C, unless otherwise specified
j
Parameter
1)
Continuous drain current
2)
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Rev. 1.1
IPI100P03P3L-04, IPP100P03P3L-04
Product Summary
V
DS
R
DS(on),max
I
D
PG-TO263-3-2
PG-TO262-3-1
Marking
3P03L04
3P03L04
3P03L04
Symbol
Conditions
T
=25°C,
C
I
D
V
=-10V
GS
T
=100°C,
C
2)
V
=-10V
GS
I
T
=25°C
D,pulse
C
E
I
=-80A
AS
D
V
GS
P
T
=25°C
tot
C
T
, T
j
stg
page 1
IPB100P03P3L-04
-30
V
(SMD version)
4
m
-100
A
PG-TO220-3-1
drain
pin 2
gate
pin 1
source
pin 3
Value
Unit
-100
A
-100
-400
450
mJ
-16 / +5
V
200
W
-55 ... +175
°C
55/175/56
2007-09-25

IPP100P03P3L-04 Summary of contents

  • Page 1

    ... Parameter 1) Continuous drain current 2) Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev. 1.1 IPI100P03P3L-04, IPP100P03P3L-04 Product Summary DS(on),max I D PG-TO263-3-2 PG-TO262-3-1 Marking 3P03L04 3P03L04 ...

  • Page 2

    ... T =25° =-30V =125° =-16V, V GSS =-4.5V, I =-50A DS(on =-4.5V, I =-50A SMD version V =-10V, I =-80A =-10V, I =-80A SMD version page 2 IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L-04 Values min. typ. max 0. - -1.5 -2.1 =0V, - -0.1 -1 =0V, - -10 -100 =0V - -10 -100 - 4.8 7.6 - 4.5 7.3 - 3.3 4 ...

  • Page 3

    ... S,pulse =0V, I =-80A =-15V, I =-50A /dt =100A/µ 0.65 K/W the chip is able to carry I thJC 2 (one layer, 70 µm thick) copper area for drain page 3 IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L-04 Values min. typ. max. - 7150 9300 - 2150 2800 - 1650 2500 - 200 - - 180 - - 25 33 ...

  • Page 4

    ... DS Rev. 1.1 2 Drain current I =f 120 100 150 200 4 Max. transient thermal impedance Z =f(t thJC parameter µs 10 µs 100 µ 100 10 [V] page 4 IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L-04 ≤ 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - [s] p 200 - 2007-09-25 ...

  • Page 5

    ... GS Rev. 1.1 6 Typ. drain-source on-state resistance R = f(I DS(on) parameter [V] 8 Typ. drain-source on-state resistance R = f(T DS(on) 5 175 °C 25 ° -60 [V] page 5 IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L- ° 100 120 140 160 180 - 100 T [° 140 180 2007-09-25 ...

  • Page 6

    ... SD Rev. 1.1 10 Typ. capacitances 4750µ 100 140 180 12 Typ. avalanche characteristics parameter: T 1000 100 1.2 1.4 1.6 1.8 [V] page 6 IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L- MHz GS Ciss Coss Crss [ j(start) 150° 100 t [µ 25°C 100°C 1000 2007-09-25 ...

  • Page 7

    ... A 400 200 125 T [° Typ. gate charge pulsed GS gate D parameter 100 Q gate Rev. 1.1 14 Drain-source breakdown voltage V BR(DSS 175 225 -60 16 Gate charge waveforms 150 200 [nC] page 7 IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L- 100 T [° 140 180 Q Q gate gate 2007-09-25 ...

  • Page 8

    ... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 IPI100P03P3L-04, IPP100P03P3L-04 page 8 IPB100P03P3L-04 2007-09-25 ...

  • Page 9

    ... Revision History Version Rev 1.1 Rev. 1.1 IPI100P03P3L-04, IPP100P03P3L-04 Date 25.09.2007 page 9 IPB100P03P3L-04 Changes Type on page 1 changed from IP_100P06P3L-04 to IP_100P03PL 04 2007-09-25 ...