IPP100P03P3L-04 Infineon Technologies, IPP100P03P3L-04 Datasheet

no-image

IPP100P03P3L-04

Manufacturer Part Number
IPP100P03P3L-04
Description
MOSFET P-CH 30V 100A TO220-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPP100P03P3L-04

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.3 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
2.1V @ 475µA
Gate Charge (qg) @ Vgs
200nC @ 10V
Input Capacitance (ciss) @ Vds
9300pF @ 25V
Power - Max
200W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000311114

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IPP100P03P3L-04
Manufacturer:
FSC
Quantity:
6 000
Price:
Rev. 1.1
OptiMOS
Features
• P-channel - Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS Compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
• Intended for reverse battery protection
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Type
IPB100P03P3L-04
IPI100P03P3L-04
IPP100P03P3L-04
®
-P Trench Power-Transistor
2)
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
j
=25 °C, unless otherwise specified
1)
Symbol
I
I
E
V
P
T
D
D,pulse
j
AS
GS
tot
, T
Marking
3P03L04
3P03L04
3P03L04
stg
PG-TO263-3-2
T
V
T
V
T
I
T
D
C
C
C
C
GS
GS
=-80A
page 1
=25°C,
=100°C,
=25°C
=25°C
=-10V
=-10V
Conditions
2)
Product Summary
V
R
I
D
DS
DS(on),max
IPI100P03P3L-04, IPP100P03P3L-04
PG-TO262-3-1
(SMD version)
-55 ... +175
gate
pin 1
55/175/56
-16 / +5
Value
-100
-100
-400
450
200
IPB100P03P3L-04
PG-TO220-3-1
-100
-30
4
2007-09-25
drain
pin 2
source
pin 3
Unit
A
mJ
V
W
°C
V
m
A

Related parts for IPP100P03P3L-04

IPP100P03P3L-04 Summary of contents

Page 1

... Parameter 1) Continuous drain current 2) Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev. 1.1 IPI100P03P3L-04, IPP100P03P3L-04 Product Summary DS(on),max I D PG-TO263-3-2 PG-TO262-3-1 Marking 3P03L04 3P03L04 ...

Page 2

... T =25° =-30V =125° =-16V, V GSS =-4.5V, I =-50A DS(on =-4.5V, I =-50A SMD version V =-10V, I =-80A =-10V, I =-80A SMD version page 2 IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L-04 Values min. typ. max 0. - -1.5 -2.1 =0V, - -0.1 -1 =0V, - -10 -100 =0V - -10 -100 - 4.8 7.6 - 4.5 7.3 - 3.3 4 ...

Page 3

... S,pulse =0V, I =-80A =-15V, I =-50A /dt =100A/µ 0.65 K/W the chip is able to carry I thJC 2 (one layer, 70 µm thick) copper area for drain page 3 IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L-04 Values min. typ. max. - 7150 9300 - 2150 2800 - 1650 2500 - 200 - - 180 - - 25 33 ...

Page 4

... DS Rev. 1.1 2 Drain current I =f 120 100 150 200 4 Max. transient thermal impedance Z =f(t thJC parameter µs 10 µs 100 µ 100 10 [V] page 4 IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L-04 ≤ 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - [s] p 200 - 2007-09-25 ...

Page 5

... GS Rev. 1.1 6 Typ. drain-source on-state resistance R = f(I DS(on) parameter [V] 8 Typ. drain-source on-state resistance R = f(T DS(on) 5 175 °C 25 ° -60 [V] page 5 IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L- ° 100 120 140 160 180 - 100 T [° 140 180 2007-09-25 ...

Page 6

... SD Rev. 1.1 10 Typ. capacitances 4750µ 100 140 180 12 Typ. avalanche characteristics parameter: T 1000 100 1.2 1.4 1.6 1.8 [V] page 6 IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L- MHz GS Ciss Coss Crss [ j(start) 150° 100 t [µ 25°C 100°C 1000 2007-09-25 ...

Page 7

... A 400 200 125 T [° Typ. gate charge pulsed GS gate D parameter 100 Q gate Rev. 1.1 14 Drain-source breakdown voltage V BR(DSS 175 225 -60 16 Gate charge waveforms 150 200 [nC] page 7 IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L- 100 T [° 140 180 Q Q gate gate 2007-09-25 ...

Page 8

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 IPI100P03P3L-04, IPP100P03P3L-04 page 8 IPB100P03P3L-04 2007-09-25 ...

Page 9

... Revision History Version Rev 1.1 Rev. 1.1 IPI100P03P3L-04, IPP100P03P3L-04 Date 25.09.2007 page 9 IPB100P03P3L-04 Changes Type on page 1 changed from IP_100P06P3L-04 to IP_100P03PL 04 2007-09-25 ...

Related keywords