IPP100P03P3L-04 Infineon Technologies, IPP100P03P3L-04 Datasheet - Page 5

• Manufacturer Part Number: IPP100P03P3L-04
• Description: MOSFET P-CH 30V 100A TO220-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP100P03P3L-04

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.3 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.1V @ 475µA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Input Capacitance (ciss) @ Vds: 9300pF @ 25V
• Power - Max: 200W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000311114

Rev. 1.1
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
= f(V
= f(V
400
300
200
100
200
150
100
50
0
0
DS
GS
0
1
); T
); V
GS
j
j
DS
= 25 °C
1
10 V
= 4V
2
5 V
2
-V
-V
DS
-55 °C
GS
3
3
[V]
[V]
4.5 V
25 °C
4
4 V
3.5 V
3 V
2.5 V
4
175 °C
5
page 5
6
5
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. drain-source on-state resistance
R
DS(on)
DS(on)
16
14
12
10
8
6
4
2
0
5
4
3
2
1
0
= f(I
= f(T
-60
0
IPI100P03P3L-04, IPP100P03P3L-04
D
j
); T
); I
20
GS
-20
D
j
= 25 °C
= -80 A; V
40
60
20
3 V
80
T
-I
GS
j
D
60
[°C]
[A]
= 10 V
100 120 140 160 180
IPB100P03P3L-04
100
3.5 V
140
2007-09-25
4 V
4.5 V
5 V
10 V
180