IPP100P03P3L-04 Infineon Technologies, IPP100P03P3L-04 Datasheet - Page 5
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IPP100P03P3L-04
Manufacturer Part Number
IPP100P03P3L-04
Description
MOSFET P-CH 30V 100A TO220-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPP100P03P3L-04.pdf
(9 pages)
Specifications of IPP100P03P3L-04
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.3 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
2.1V @ 475µA
Gate Charge (qg) @ Vgs
200nC @ 10V
Input Capacitance (ciss) @ Vds
9300pF @ 25V
Power - Max
200W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000311114
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPP100P03P3L-04
Manufacturer:
FSC
Quantity:
6 000
Rev. 1.1
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
= f(V
= f(V
400
300
200
100
200
150
100
50
0
0
DS
GS
0
1
); T
); V
GS
j
j
DS
= 25 °C
1
10 V
= 4V
2
5 V
2
-V
-V
DS
-55 °C
GS
3
3
[V]
[V]
4.5 V
25 °C
4
4 V
3.5 V
3 V
2.5 V
4
175 °C
5
page 5
6
5
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. drain-source on-state resistance
R
DS(on)
DS(on)
16
14
12
10
8
6
4
2
0
5
4
3
2
1
0
= f(I
= f(T
-60
0
IPI100P03P3L-04, IPP100P03P3L-04
D
j
); T
); I
20
GS
-20
D
j
= 25 °C
= -80 A; V
40
60
20
3 V
80
T
-I
GS
j
D
60
[°C]
[A]
= 10 V
100 120 140 160 180
IPB100P03P3L-04
100
3.5 V
140
2007-09-25
4 V
4.5 V
5 V
10 V
180