IPP100P03P3L-04 Infineon Technologies, IPP100P03P3L-04 Datasheet - Page 6

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IPP100P03P3L-04

Manufacturer Part Number
IPP100P03P3L-04
Description
MOSFET P-CH 30V 100A TO220-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPP100P03P3L-04

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.3 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
2.1V @ 475µA
Gate Charge (qg) @ Vgs
200nC @ 10V
Input Capacitance (ciss) @ Vds
9300pF @ 25V
Power - Max
200W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000311114

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IPP100P03P3L-04
Manufacturer:
FSC
Quantity:
6 000
Price:
Rev. 1.1
9 Typ. gate threshold voltage
V
parameter: I
11 Typical forward diode characteristicis
IF = f(V
parameter: T
GS(th)
10
10
10
10
1.75
1.25
0.75
0.25
1.5
0.5
= f(T
3
2
1
0
SD
2
1
0
0
-60
)
j
); V
D
0.2
j
-20
GS
0.4
= V
175 °C
0.6
DS
20
25 °C
475µA
-V
0.8
T
SD
j
60
[°C]
[V]
1
4750µA
1.2
100
1.4
140
1.6
180
1.8
page 6
10 Typ. capacitances
C = f(V
12 Typ. avalanche characteristics
I
parameter: T
AV
= f(t
1000
100
10
10
10
10
1
5
4
3
AV
DS
0
1
)
); V
Coss
Ciss
Crss
IPI100P03P3L-04, IPP100P03P3L-04
j(start)
GS
5
= 0 V; f = 1 MHz
10
10
-V
t
AV
DS
15
[µs]
[V]
150°C
IPB100P03P3L-04
100
20
100°C
25
2007-09-25
25°C
1000
30

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