IPP100P03P3L-04 Infineon Technologies, IPP100P03P3L-04 Datasheet - Page 8
Manufacturer Part Number
MOSFET P-CH 30V 100A TO220-3
Specifications of IPP100P03P3L-04
MOSFET P-Channel, Metal Oxide
Logic Level Gate
Rds On (max) @ Id, Vgs
4.3 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
Current - Continuous Drain (id) @ 25° C
Vgs(th) (max) @ Id
2.1V @ 475µA
Gate Charge (qg) @ Vgs
200nC @ 10V
Input Capacitance (ciss) @ Vds
9300pF @ 25V
Power - Max
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Bonase Electronics (HK) Co., Limited
Infineon Technologies AG
81726 Munich, Germany
Infineon Technologies AG 2007
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