SPA16N50C3 Infineon Technologies, SPA16N50C3 Datasheet - Page 3

• Manufacturer Part Number: SPA16N50C3
• Description: MOSFET N-CH 560V 16A TO220FP
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPA16N50C3

• Package / Case: TO-220FP
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 280 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 560V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 3.9V @ 675µA
• Gate Charge (qg) @ Vgs: 66nC @ 10V
• Input Capacitance (ciss) @ Vds: 1600pF @ 25V
• Power - Max: 34W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.28 Ohm @ 10 V
• Drain-source Breakdown Voltage: 560 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 16 A
• Power Dissipation: 34000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000216351; SPA16N50C3IN; SPA16N50C3X; SPA16N50C3XK; SPA16N50C3XTIN; SPA16N50C3XTIN

Rev. 3.2
Electrical Characteristics, at T
Parameter
Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance,
energy related
Effective output capacitance,
time related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
1 Limited only by maximum temperature
2 Repetitve avalanche causes additional power losses that can be calculated as P
3 Soldering temperature for TO-263: 220°C, reflow
4 C
5 C
6 I
Identical low-side and high-side switch.
SD
o(er)
o(tr)
<=I
is a fixed capacitance that gives the same charging time as C
is a fixed capacitance that gives the same stored energy as C
D
, di/dt<=400A/us, V
DClink
=400V, V
4)
5)
Symbol
g
C
C
C
C
C
t
t
t
t
Q
Q
Q
V
j
d(on)
r
d(off)
f
= 25 °C, unless otherwise specified
fs
(plateau)
iss
oss
rss
o(er)
o(tr)
gs
gd
g
peak
<V
p age 3
BR, DSS
V
V
V
V
V
I
V
f=1MHz
V
V
V
I
D
D
DS
GS
GS
DS
DD
DD
DD
GS
DD
=10A
=16A, R
≥ 2*I
=0V to 400V
=0V, V
=0V,
=380V, V
=380V, I
=380V, I
=0 to 10V
=380V, I
Conditions
, T
D
j
*R
<T
G
DS
=4.3 Ω
DS(on)max
j,max
D
D
D
GS
=25V,
=16A
=16A,
=16A
=0/10V,
.
oss
oss
SPI16N50C3, SPA16N50C3
while V
while V
,
min.
DS
DS
-
-
-
-
-
-
-
-
-
-
-
-
-
-
AV
is rising from 0 to 80% V
is rising from 0 to 80% V
=E
Values
AR
1600
typ.
800
124
*f.
36
66
14
30
64
10
50
7
5
8
8
SPP16N50C3
2009-12-22
max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
nC
V
Unit
S
pF
ns
DSS
DSS
.
.