SPA16N50C3 Infineon Technologies, SPA16N50C3 Datasheet - Page 7

• Manufacturer Part Number: SPA16N50C3
• Description: MOSFET N-CH 560V 16A TO220FP
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPA16N50C3

• Package / Case: TO-220FP
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 280 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 560V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 3.9V @ 675µA
• Gate Charge (qg) @ Vgs: 66nC @ 10V
• Input Capacitance (ciss) @ Vds: 1600pF @ 25V
• Power - Max: 34W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.28 Ohm @ 10 V
• Drain-source Breakdown Voltage: 560 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 16 A
• Power Dissipation: 34000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000216351; SPA16N50C3IN; SPA16N50C3X; SPA16N50C3XK; SPA16N50C3XTIN; SPA16N50C3XTIN

Rev. 3.2
9 Typ. drain-source on resistance
R
parameter: T
11 Typ. transfer characteristics
I
parameter: t
D
DS(on)
= f ( V
Ω
1.2
0.8
0.4
A
60
50
45
40
35
30
25
20
15
10
2
0
5
0
0
0
=f(I
GS
4V
1
D
); V
)
p
5
j
=150°C, V
4.5V
2
= 10 µs
DS
3
≥ 2 x I
10
4
5V
GS
15
D
5
Tj = 25°C
x R
6
6V
DS(on)max
20
7
Tj = 150°C
8
A
8V
20V
V
V
I
D
GS
p age 7
30
10
10 Drain-source on-state resistance
R
parameter : I
12 Typ. gate charge
V
parameter: I
GS
DS(on)
Ω
1.6
1.2
0.8
0.6
0.4
0.2
= f (Q
V
16
12
10
1
0
8
6
4
2
0
-60
0
SPP16N50C3
SPP16N50C3
= f (T
10
SPI16N50C3, SPA16N50C3
Gate
-20
D
D
20
j
)
= 16 A pulsed
= 10 A, V
)
30
20
98%
40
0,2
typ
V
60
50
GS
DS max
60
SPP16N50C3
= 10 V
100
0,8 V
70
2009-12-22
DS max
80
°C
nC
T
Q
j
Gate
180
100