SPA16N50C3 Infineon Technologies, SPA16N50C3 Datasheet - Page 9

• Manufacturer Part Number: SPA16N50C3
• Description: MOSFET N-CH 560V 16A TO220FP
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPA16N50C3

• Package / Case: TO-220FP
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 280 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 560V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 3.9V @ 675µA
• Gate Charge (qg) @ Vgs: 66nC @ 10V
• Input Capacitance (ciss) @ Vds: 1600pF @ 25V
• Power - Max: 34W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.28 Ohm @ 10 V
• Drain-source Breakdown Voltage: 560 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 16 A
• Power Dissipation: 34000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000216351; SPA16N50C3IN; SPA16N50C3X; SPA16N50C3XK; SPA16N50C3XTIN; SPA16N50C3XTIN

Rev. 3.2
17 Avalanche power losses
P
parameter: E
19 Typ. C
E
AR
oss
µJ
W
450
350
300
250
200
150
100
=f(V
= f (f )
50
0
9
7
6
5
4
3
2
1
0
10
0
2
DS
oss
)
100
AR
stored energy
10
=0.64mJ
3
200
10
4
300
10
V
5
f
V
Hz
DS
500
p age 9
10
6
18 Typ. capacitances
C = f (V
parameter: V
pF
10
10
10
10
10
4
3
2
1
0
0
DS
)
SPI16N50C3, SPA16N50C3
100
GS
Crss
Coss
=0V, f=1 MHz
Ciss
200
300
SPP16N50C3
2009-12-22
V
V
DS
500