PSMN005-55B,118 NXP Semiconductors, PSMN005-55B,118 Datasheet - Page 3

• Manufacturer Part Number: PSMN005-55B,118
• Description: MOSFET N-CH 55V 75A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN005-55B,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 103nC @ 5V
• Input Capacitance (ciss) @ Vds: 6500pF @ 25V
• Power - Max: 230W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934055637118; PSMN005-55B /T3; PSMN005-55B /T3

Philips Semiconductors
October 1999
THERMAL RESISTANCES
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
ELECTRICAL CHARACTERISTICS
T
SYMBOL PARAMETER
R
R
SYMBOL PARAMETER
E
I
SYMBOL PARAMETER
V
V
R
I
I
Q
Q
Q
t
t
t
t
L
L
L
C
C
C
j
= 25˚C unless otherwise specified
N-channel logic level TrenchMOS
AS
GSS
DSS
d on
r
d off
f
d
d
s
AS
(BR)DSS
GS(TO)
th j-mb
th j-a
DS(ON)
iss
oss
rss
g(tot)
gs
gd
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
Non-repetitive avalanche
energy
Non-repetitive avalanche
current
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source on-state
resistance
Gate source leakage current V
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal drain inductance
Internal source inductance
Input capacitance
Output capacitance
Feedback capacitance
CONDITIONS
SOT78 package, in free air
SOT404 package, pcb mounted, minimum
footprint
CONDITIONS
Unclamped inductive load, I
t
V
CONDITIONS
V
V
V
V
V
V
V
I
V
V
Resistive load
Measured from tab to centre of die
Measured from drain lead to centre of die
(SOT78 package only)
Measured from source lead to source
bond pad
V
p
D
DD
GS
DS
GS
GS
GS
GS
GS
DS
DD
GS
GS
= 75 A; V
= 100 s; T
= 0 V; I
= V
= 10 V; I
= 5 V; I
= 4.5 V; I
= 5 V; I
=
= 55 V; V
= 30 V; R
= 5 V; R
= 0 V; V
15 V; R
GS
10 V; V
(TM)
; I
D
D
D
D
DD
DS
G
D
= 0.25 mA;
= 1 mA
= 25 A
= 25 A; T
D
GS
j
GS
D
= 44 V; V
= 10
= 25 A
prior to avalanche = 25˚C;
3
transistor
= 25 V; f = 1 MHz
= 25 A
= 1.2 ;
DS
= 0 V;
= 50 ; V
= 0 V
j
GS
= 175˚C
GS
= 5 V
AS
= 5 V
= 75 A;
T
T
T
T
j
j
j
j
= 175˚C
= 175˚C
= -55˚C
= -55˚C
MIN. TYP. MAX. UNIT
1.0
0.5
TYP.
55
50
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
60
50
PSMN005-55B;
-
-
-
PSMN005-55P
6500
1500
0.05
103
180
420
235
700
1.5
4.8
5.3
3.5
4.5
7.5
Product specification
15
52
45
2
-
-
-
-
-
-
-
MAX.
MAX.
0.65
268
75
-
-
13.2
100
500
2.0
2.3
5.8
6.3
6.7
10
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Rev 1.200
UNIT
UNIT
K/W
K/W
K/W
mJ
A
m
m
m
m
nA
nC
nC
nC
nH
nH
nH
pF
pF
pF
ns
ns
ns
ns
V
V
V
V
V
A
A