PSMN005-55B,118 NXP Semiconductors, PSMN005-55B,118 Datasheet - Page 8

• Manufacturer Part Number: PSMN005-55B,118
• Description: MOSFET N-CH 55V 75A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN005-55B,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 103nC @ 5V
• Input Capacitance (ciss) @ Vds: 6500pF @ 25V
• Power - Max: 230W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934055637118; PSMN005-55B /T3; PSMN005-55B /T3

Philips Semiconductors
October 1999
MECHANICAL DATA
Notes
1. This product is supplied in anti-static packaging. The gate-source input must be protected against static
2. Refer to mounting instructions for SOT78 (TO220AB) package.
3. Epoxy meets UL94 V0 at 1/8".
N-channel logic level TrenchMOS
discharge during transport or handling.
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220
DIMENSIONS (mm are the original dimensions)
Note
1. Terminals in this zone are not tinned.
UNIT
mm
OUTLINE
VERSION
Fig.16. SOT78 (TO220AB); pin 2 connected to mounting base (Net mass:2g)
SOT78
4.5
4.1
A
1.39
1.27
A 1
0.9
0.7
b
IEC
D
L
b 1
1.3
1.0
L 2
D 1
(1)
b 1
0.7
0.4
c
TO-220
JEDEC
15.8
15.2
1
e
D
E
P
REFERENCES
2
e
6.4
5.9
D 1
(TM)
0
3
b
10.3
9.7
E
L 1
q
scale
EIAJ
8
transistor
5
2.54
e
10 mm
15.0
13.5
L
3.30
2.79
L 1
L 2
max.
Q
3.0
(1)
A
A 1
PROJECTION
3.8
3.6
c
EUROPEAN
P
3.0
2.7
q
2.6
2.2
Q
PSMN005-55B;
ISSUE DATE
PSMN005-55P
97-06-11
Product specification
SOT78
Rev 1.200