BS108,126 NXP Semiconductors, BS108,126 Datasheet

MOSFET N-CH 200V 300MA SOT54

BS108,126

Manufacturer Part Number
BS108,126
Description
MOSFET N-CH 200V 300MA SOT54
Manufacturer
NXP Semiconductors
Datasheet
1.BS108126.pdf (8 pages)

Specifications of BS108,126

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5 Ohm @ 100mA, 2.8V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
300mA
Vgs(th) (max) @ Id
1.8V @ 1mA
Input Capacitance (ciss) @ Vds
120pF @ 25V
Power - Max
1W
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Other names
934003840126
BS108 AMO
BS108 AMO
Product specification
Supersedes data of 1997 Jun 17
book, halfpage
DATA SHEET
BS108
N-channel enhancement mode
vertical D-MOS transistor
M3D186
DISCRETE SEMICONDUCTORS
2001 May 18

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BS108,126 Summary of contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BS108 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 17 2001 May 18 ...

Page 2

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown. APPLICATIONS Line current interruptor in telephone sets Applications in relay, high-speed and line transformer drivers. DESCRIPTION N-channel enhancement mode vertical ...

Page 3

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to ambient note 1 th j-a Note 1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for the ...

Page 4

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor handbook, halfpage Fig.2 Switching times test circuit. 2001 May 18 handbook, halfpage INPUT OUTPUT I D MSA631 ...

Page 5

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads DIMENSIONS (mm are the original dimensions) UNIT 5.2 0.48 ...

Page 6

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor DATA SHEET STATUS PRODUCT (1) DATA SHEET STATUS STATUS Objective data Development Preliminary data Qualification Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing ...

Page 7

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor 2001 May 18 NOTES 7 Product specification BS108 ...

Page 8

Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. + 101 ...

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