BS108,126 NXP Semiconductors, BS108,126 Datasheet - Page 5

• Manufacturer Part Number: BS108,126
• Description: MOSFET N-CH 200V 300MA SOT54
• Manufacturer: NXP Semiconductors

Specifications of BS108,126

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5 Ohm @ 100mA, 2.8V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 1.8V @ 1mA
• Input Capacitance (ciss) @ Vds: 120pF @ 25V
• Power - Max: 1W
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: 934003840126; BS108 AMO; BS108 AMO

Philips Semiconductors
PACKAGE OUTLINE
2001 May 18
Plastic single-ended leaded (through hole) package; 3 leads
N-channel enhancement mode
vertical D-MOS transistor
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
UNIT
mm
VERSION
OUTLINE
SOT54
D
5.2
5.0
A
0.48
0.40
d
b
E
3
1
2
0.66
0.56
b 1
IEC
b
1
0.45
0.40
c
4.8
4.4
D
JEDEC
TO-92
1.7
1.4
d
REFERENCES
0
4.2
3.6
E
2.54
A
e
SC-43
scale
EIAJ
2.5
5
1.27
e 1
14.5
12.7
5 mm
L
L 1
L 1
2.5
(1)
L
PROJECTION
EUROPEAN
Product specification
ISSUE DATE
b
97-02-28
c
BS108
e 1
e
SOT54