BS108,126 NXP Semiconductors, BS108,126 Datasheet - Page 2

• Manufacturer Part Number: BS108,126
• Description: MOSFET N-CH 200V 300MA SOT54
• Manufacturer: NXP Semiconductors

Specifications of BS108,126

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5 Ohm @ 100mA, 2.8V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 1.8V @ 1mA
• Input Capacitance (ciss) @ Vds: 120pF @ 25V
• Power - Max: 1W
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: 934003840126; BS108 AMO; BS108 AMO

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
N-channel enhancement mode vertical D-MOS transistor
in a SOT54 (TO-92) package.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead minimum
2001 May 18
V
V
I
R
V
V
I
I
P
T
T
D
D
DM
SYMBOL
SYMBOL
stg
j
Direct interface to C-MOS, TTL, etc.
High-speed switching
No secondary breakdown.
Line current interruptor in telephone sets
Applications in relay, high-speed and line transformer
drivers.
DS
GSth
DS
GSO
tot
DSon
N-channel enhancement mode
vertical D-MOS transistor
10
10 mm.
drain-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
junction temperature
PARAMETER
PARAMETER
open drain
T
amb
2
25 C; note 1
PINNING - SOT54
CONDITIONS
handbook, halfpage
Fig.1
PIN
1
2
3
Simplified outline (SOT54; TO-92) and
symbol.
1
2
3
source
gate
drain
200
1.8
300
5
55
MIN.
MAX.
DESCRIPTION
Product specification
MAM150
200
300
1.2
1
+150
150
20
MAX.
g
V
V
mA
BS108
UNIT
V
V
mA
A
W
d
s
C
C
UNIT