BSN254A,126 NXP Semiconductors, BSN254A,126 Datasheet - Page 4

• Manufacturer Part Number: BSN254A,126
• Description: MOSFET N-CH 250V 310MA SOT54
• Manufacturer: NXP Semiconductors

Specifications of BSN254A,126

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 Ohm @ 300mA, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 310mA
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 120pF @ 25V
• Power - Max: 1W
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: 934003960126; BSN254A AMO; BSN254A AMO

Philips Semiconductors
2002 Feb 19
handbook, halfpage
handbook, halfpage
N-channel enhancement mode
vertical D-MOS transistor
P tot
(W)
1.2
0.8
0.4
0
0
10 V
0 V
Fig.2 Switching times test circuit.
Fig.4 Power derating curve.
50
50
100
V DD = 50 V
I D
150
MBB691
T amb ( C)
MRC238
200
4
handbook, halfpage
handbook, halfpage
T
(1) V
(2) V
(3) V
Fig.5
j
= 25 C.
(A)
I D
INPUT
OUTPUT
1.2
0.8
0.4
0
GS
GS
GS
0
= 10 V.
= 5 V.
= 4 V.
Typical output characteristics.
Fig.3 Input and output waveforms.
2
10 %
(1)
(2)
t on
(4) V
(5) V
(6) V
90 %
4
BSN254; BSN254A
GS
GS
GS
(3)
= 3.5 V.
= 3 V.
= 2.5 V.
6
90 %
Product specification
(7) V
8
t off
V DS (V)
(4)
(5)
(6)
(7)
MGU569
GS
MBB692
10 %
= 2 V.
10