BSN254A,126 NXP Semiconductors, BSN254A,126 Datasheet - Page 6

• Manufacturer Part Number: BSN254A,126
• Description: MOSFET N-CH 250V 310MA SOT54
• Manufacturer: NXP Semiconductors

Specifications of BSN254A,126

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 Ohm @ 300mA, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 310mA
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 120pF @ 25V
• Power - Max: 1W
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: 934003960126; BSN254A AMO; BSN254A AMO

Philips Semiconductors
2002 Feb 19
handbook, halfpage
N-channel enhancement mode
vertical D-MOS transistor
Typical R
(1) I
(2) I
Fig.9
k
=
1.5
0.5
k
---------------------------------------- -
R
D
D
2
1
0
DSon
R
= 250 mA; V
= 20 mA; V
50
DSon
DSon:
Temperature coefficient of drain-source
on-state resistance; typical values.
at 25 C
at T
GS
j
GS
0
= 2.4 V.
= 10 V.
50
100
(1)
(2)
T j ( C)
MGU573
150
6
handbook, halfpage
Typical V
Fig.10 Temperature coefficient of gate-source
k
=
1.25
0.75
0.25
k
0.5
--------------------------------------- -
V
1
0
GSth
V
50
GSth
GSth
threshold voltage; typical values.
at 25 C
at T
at 1 mA.
j
0
BSN254; BSN254A
50
Product specification
100
T j ( C)
MGU574
150