BUK9620-100A,118 NXP Semiconductors, BUK9620-100A,118 Datasheet - Page 5

• Manufacturer Part Number: BUK9620-100A,118
• Description: MOSFET N-CH 100V 63A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9620-100A,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 19 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 63A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 6385pF @ 25V
• Power - Max: 200W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: 934055653118; BUK9620-100A /T3; BUK9620-100A /T3

8. Characteristics
Table 5:
T
Philips Semiconductors
9397 750 07915
Product specification
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
C
C
C
t
t
t
t
L
L
DSS
GSS
d(on)
r
d(off)
f
j
d
s
(BR)DSS
GS(th)
DSon
iss
oss
rss
= 25 C unless otherwise specified
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold voltage I
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
internal source inductance
Conditions
I
Figure 9
V
V
V
Figure 7
V
V
V
f = 1 MHz;
V
V
from drain lead 6 mm from
package to centre of die
from contact screw on
mounting base to centre of
die SOT78
from upper edge of drain
mounting base to centre of
die SOT404
from source lead to source
bond pad
D
D
DS
GS
GS
GS
GS
GS
DD
GS
T
T
T
T
T
T
T
T
T
= 0.25 mA; V
= 1 mA; V
j
j
j
j
j
j
j
j
j
= 100 V; V
= 25 C
= 55 C
= 25 C
= 175 C
= 55 C
= 25 C
= 175 C
= 10 V; V
= 5 V; I
= 25 C
= 175 C
= 4.5 V; I
= 10 V; I
= 0 V; V
= 30 V; R
= 5 V; R
Rev. 01 — 7 February 2001
BUK9520-100A; BUK9620-100A
and
Figure 12
D
DS
DS
G
D
8
= 25 A;
D
L
= 10
= 25 A
GS
DS
= V
= 25 A
GS
= 25 V;
= 1.2 ;
= 0 V
= 0 V
= 0 V
GS
;
Min
100
89
1
0.5
TrenchMOS™ logic level FET
Typ
1.5
0.05
2
17
16
4790
450
270
35
143
288
131
4.5
3.5
2.5
7.5
© Philips Electronics N.V. 2001. All rights reserved.
Max
2
2.3
10
500
100
20
50
22
19
6385
542
400
Unit
V
V
V
V
V
nA
m
m
m
m
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
nH
5 of 15
A
A