BUK9620-100A,118 NXP Semiconductors, BUK9620-100A,118 Datasheet - Page 7

• Manufacturer Part Number: BUK9620-100A,118
• Description: MOSFET N-CH 100V 63A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9620-100A,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 19 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 63A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 6385pF @ 25V
• Power - Max: 200W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: 934055653118; BUK9620-100A /T3; BUK9620-100A /T3

Philips Semiconductors
9397 750 07915
Product specification
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Forward transconductance as a function of
I
T
D
j
= 25 C; V
= 1 mA; V
junction temperature.
drain current; typical values.
V GS(th)
g fs
(S)
(V)
120
100
80
60
40
20
2.5
1.5
0.5
0
2
1
0
-60
0
DS
DS
= V
= 25 V
-20
GS
20
20
max
min
typ
40
60
100
60
140
I D (A)
T j ( o C)
03nd82
03aa33
180
80
Rev. 01 — 7 February 2001
BUK9520-100A; BUK9620-100A
Fig 10. Sub-threshold drain current as a function of
Fig 12. Input, output and reverse transfer capacitances
T
V
j
GS
= 25 C; V
C (pF)
gate-source voltage.
as a function of drain-source voltage; typical
values.
= 0 V; f = 1 MHz
12000
10000
(A)
I D
8000
6000
4000
2000
10 -1
10 -2
10 -3
10 -4
10 -5
10 -6
0
10 -2
0
DS
= V
0.5
10 -1
GS
TrenchMOS™ logic level FET
1
min
1
1.5
© Philips Electronics N.V. 2001. All rights reserved.
typ
2
10
max
V GS (V)
V DS (V)
2.5
03nd87
03aa36
10 2
Coss
Crss
Ciss
3
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