STY34NB50 STMicroelectronics, STY34NB50 Datasheet - Page 3

• Manufacturer Part Number: STY34NB50
• Description: MOSFET N-CH 500V 34A MAX247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STY34NB50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 17A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 34A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 223nC @ 10V
• Input Capacitance (ciss) @ Vds: 9100pF @ 25V
• Power - Max: 450W
• Mounting Type: Through Hole
• Package / Case: MAX247™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 497-2680-5

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
( ) Pulse width limited by safe operating area
Safe Operating Area
Symbol
Symbol
Symbol
V
I
t
SDM
t
I
r(Voff)
SD
Q
Q
d(on)
I
Q
RRM
Q
t
SD
t
t
t
rr
gd
c
r
gs
f
rr
g
( )
( )
Turn-on Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Off-voltage Rise Time
Fall Time
Cross-over Time
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Parameter
Parameter
Parameter
V
R
(see test circuit, figure 3)
V
V
R
(see test circuit, figure 5)
I
I
V
(see test circuit, figure 5)
SD
SD
DD
DD
DD
DD
G
G
= 4.7
= 4.7
= 34 A
= 34 A
= 250 V
= 400 V
= 400 V I
= 100 V
Test Conditions
Test Conditions
Test Conditions
V
D
GS
= 34 A V
= 0
di/dt = 100 A/ s
Thermal Impedance
T
V
j
GS
V
= 150
GS
I
D
GS
I
D
= 10 V
= 34 A
= 10 V
= 17 A
= 10 V
o
C
Min.
Min.
Min.
Typ.
Typ.
Typ.
159
120
950
46
32
35
67
56
53
12
25
Max.
Max.
Max.
STY34NB50
223
168
136
1.6
64
45
78
74
34
Unit
Unit
Unit
nC
nC
nC
ns
ns
ns
ns
ns
ns
A
A
V
A
C
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