STB16PF06LT4 STMicroelectronics, STB16PF06LT4 Datasheet - Page 2

• Manufacturer Part Number: STB16PF06LT4
• Description: MOSFET P-CH 60V 16A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB16PF06LT4

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 125 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 1.5V @ 100µA
• Gate Charge (qg) @ Vgs: 15.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 630pF @ 25V
• Power - Max: 70W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4099-2

STB16PF06L
2/10
Table 3: Absolute Maximum ratings
( ) Pulse width limited by safe operating area
(1) I
(2) Starting T
Note:For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reverse
Table 4: Thermal Data
(#) When Mounted on 1 inch
ELECTRICAL CHARACTERISTICS (T
Table 5: On/Off
Rthj-PCB(#) Thermal Resistance Junction-PCB Max
Rthj-case
V
Symbol
Symbol
dv/dt (1)
SD
R
E
V
I
(BR)DSS
V
DM
P
I
AS
I
DS(on)
V
V
GS(th)
T
DSS
GSS
DGR
TOT
I
I
T
T
DS
GS
stg
D
D
16A, di/dt 100A/µs, V
j
l
( )
(2)
j
= 25°C , I
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Drain-source Voltage (V
Drain-gate Voltage (R
Gate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Operating Junction Temperature
Storage Temperature
Thermal Resistance Junction-case Max
Maximum Lead Temperature For Soldering
Purpose (1.6 mm frrom case, for 10sec)
D
= 8 A , V
2
Parameter
FR-4 board, 2 oz of Cu
DS
DD
= 0)
DD
V
GS
(BR)DSS
= 30 V
Parameter
= 0)
C
GS
= 25°C
, T
GS
= 20 k )
j
= 0)
T
JMAX.
CASE
C
C
I
V
V
V
V
V
V
D
= 25°C
= 100°C
DS
DS
GS
DS
GS
GS
= 250µA, V
=25°C UNLESS OTHERWISE SPECIFIED)
= Max Rating
= Max Rating, T
= ± 16V
= V
= 10V, I
= 5V, I
Test Conditions
GS
, I
D
D
D
= 8 A
GS
= 8 A
= 100µA
= 0
C
= 125 °C
- 55 to 175
Min.
1.5
60
Value
± 16
11.4
2.14
250
300
0.4
60
60
16
64
70
20
34
0.130
Typ.
0.11
0.125
0.165
Max.
±100
10
1
W/°C
°C/W
°C/W
Unit
V/ns
Unit
mJ
°C
°C
µA
µA
nA
W
V
V
V
A
A
A
V
V