STB16PF06LT4 STMicroelectronics, STB16PF06LT4 Datasheet - Page 3

• Manufacturer Part Number: STB16PF06LT4
• Description: MOSFET P-CH 60V 16A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB16PF06LT4

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 125 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 1.5V @ 100µA
• Gate Charge (qg) @ Vgs: 15.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 630pF @ 25V
• Power - Max: 70W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4099-2

ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 6: Dynamic
Table 7: Source Drain Diode
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Symbol
Symbol
I
V
SDM
t
t
I
C
SD
C
C
Q
d(on)
d(off)
Q
RRM
I
2. Pulse width limited by safe operating area.
Q
g
Q
SD
t
oss
t
t
iss
rss
rr
fs
gs
gd
r
f
g
rr
(1)
(2)
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Parameter
Parameter
V
V
V
(Resistive Load , Figure 1)
V
V
(See test circuit, Figure 2)
I
I
V
(see test circuit, Figure 3)
V
SD
SD
DS
DD
GS
DD
GS
DD
DS
= 8 A, V
= 16 A, di/dt = 100A/µs
= 10 V
= 30 V, I
= 4.5 V
= 48 V, I
= 4.5V
= 20V, T
= 25V, f = 1 MHz, V
Test Conditions
Test Conditions
,
GS
I
D
D
D
j
= 150°C
= 8 A, R
= 3 A
= 16 A,
= 0
G
= 4.7
GS
= 0
Min.
Min.
Typ.
Typ.
25.5
19.5
48.5
87.3
11.4
630
121
129
7.2
5.2
4.7
3.6
49
90
STB16PF06L
Max.
Max.
15.5
1.3
16
64
Unit
Unit
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
3/10
S
A
A
V
A