MOSFET N-CH 30V 160A D2PAK

STB160NF3LLT4

Manufacturer Part NumberSTB160NF3LLT4
DescriptionMOSFET N-CH 30V 160A D2PAK
ManufacturerSTMicroelectronics
SeriesSTripFET™
STB160NF3LLT4 datasheet
 

Specifications of STB160NF3LLT4

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs3.3 mOhm @ 80A, 10VDrain To Source Voltage (vdss)30V
Current - Continuous Drain (id) @ 25° C160AVgs(th) (max) @ Id1V @ 250µA
Gate Charge (qg) @ Vgs110nC @ 4.5VInput Capacitance (ciss) @ Vds5500pF @ 25V
Power - Max300WMounting TypeSurface Mount
Package / CaseD²Pak, TO-263 (2 leads + tab)Lead Free Status / RoHS StatusLead free / RoHS Compliant
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Electrical characteristics
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 3.
On/off states
Symbol
Drain-source
V
(BR)DSS
breakdown voltage
Zero gate voltage
I
DSS
drain current (V
Gate-body leakage
I
GSS
current (V
V
Gate threshold voltage
GS(th)
Static drain-source on
R
DS(on)
resistance
Table 4.
Dynamic
Symbol
Forward
(1)
g
fs
transconductance
Input capacitance
C
iss
Output capacitance
C
oss
Reverse transfer
C
rss
capacitance
t
Turn-on delay time
d(on)
t
Rise time
r
t
Turn-off delay time
d(off)
t
Fall time
f
Q
Total gate charge
g
Q
Gate-source charge
gs
Q
Gate-drain charge
gd
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
4/13
Parameter
Test conditions
I
= 250µA, V
D
V
= 20V
DS
= 0)
V
= 20V, T
GS
DS
C
V
= ± 16V
GS
= 0)
DS
V
= V
, I
DS
GS
D
V
= 10V, I
GS
D
V
= 4.5V, I
GS
D
Parameter
Test conditions
V
= 15V
I
DS
,
V
= 25V, f = 1MHz,
DS
V
= 0
GS
V
= 15V, I
DD
D
R
= 4.7Ω V
G
GS
(see
Figure
13)
V
= 24V, I
DD
D
V
= 4.5V, R
GS
(see
Figure
14)
STB160NF3LL
Min.
Typ.
Max.
=0
30
GS
= 125°C
±100
= 250µA
1
= 80A
0.0028
0.0033
= 80A
0.0035
0.0048
Min.
Typ.
Max.
= 80A
110
D
5500
1700
300
50
= 80A
350
= 4.5V
150
130
= 160A,
80
110
= 4.7Ω
30
G
45
Unit
V
1
µA
10
µA
nA
V
Unit
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC