BSS138N-E6327 Infineon Technologies, BSS138N-E6327 Datasheet - Page 8

• Manufacturer Part Number: BSS138N-E6327
• Description: MOSFET N-CH 60V 230MA SOT-23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS138N-E6327

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.5 Ohm @ 230mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 230mA
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Gate Charge (qg) @ Vgs: 1.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 41pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSS138E6327; BSS138INTR; BSS138INTR; BSS138NE6327XT; BSS138NEINTR; BSS138NEXTINTR; BXX138NEXTINTR; SP000014560

BSS138N
Package Outline:
Footprint:
Packaging:
Dimensions in mm
Rev. 2.82
page 8
2009-02-11