BSS138N E7854

Manufacturer Part NumberBSS138N E7854
DescriptionMOSFET N-CH 60V 230MA SOT-23
ManufacturerInfineon Technologies
SeriesSIPMOS®
BSS138N E7854 datasheet
 


Specifications of BSS138N E7854

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs3.5 Ohm @ 230mA, 10VDrain To Source Voltage (vdss)60V
Current - Continuous Drain (id) @ 25° C230mAVgs(th) (max) @ Id1.4V @ 250µA
Gate Charge (qg) @ Vgs1.4nC @ 10VInput Capacitance (ciss) @ Vds41pF @ 25V
Power - Max360mWMounting TypeSurface Mount
Package / CaseSOT-23-3, TO-236-3, Micro3™, SSD3, SST3Lead Free Status / RoHS StatusLead free / RoHS Compliant
Other namesBSS138NE7854XT
SP000014562
  
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®
SIPMOS
Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Logic level
• dv /dt rated
• Pb-free lead-plating; RoHS compliant
Type
Package
BSS138N
PG-SOT-23
BSS138N
PG-SOT-23
Parameter
Continuous drain current
Pulsed drain current
Reverse diode dv /dt
Gate source voltage
ESD sensitivity
ESD sensitivity
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Rev. 2.82
Product Summary
V
DS
R
DS(on),max
I
D
Tape and Reel
Marking
L6327: 3000
SKs
L6433: 10000
SKs
Symbol Conditions
I
T
=25 °C
D
A
T
=70 °C
A
I
T
=25 °C
D,pulse
A
I
=0.23 A, V
=48 V,
D
DS
dv /dt
di /dt =200 A/µs,
T
=150 °C
j,max
V
GS
MIL-STD 883 (HBM)
JESD22-A114 (HBM)
P
T
=25 °C
tot
A
T
, T
j
stg
page 1
BSS138N
60
V
3.5
0.23
A
PG-SOT-23
Value
Unit
0.23
A
0.18
0.92
6
kV/µs
±20
V
Class 1 (<1999V)
Class 0 (<250V)
0.36
W
-55 ... 150
°C
55/150/56
2009-02-11

BSS138N E7854 Summary of contents

  • Page 1

    SIPMOS Small-Signal-Transistor Features • N-channel • Enhancement mode • Logic level • dv /dt rated • Pb-free lead-plating; RoHS compliant Type Package BSS138N PG-SOT-23 BSS138N PG-SOT-23 Parameter Continuous drain current Pulsed drain current Reverse diode dv /dt Gate source ...

  • Page 2

    Parameter Thermal characteristics Thermal resistance, junction - minimal footprint Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current Gate-source leakage current Drain-source on-state resistance Transconductance Rev. 2.82 Symbol Conditions R thJA =25 °C, unless ...

  • Page 3

    Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode ...

  • Page 4

    Power dissipation P =f(T ) tot A 0.4 0.3 0.2 0 Safe operating area I =f =25 ° parameter limited by on-state resistance ...

  • Page 5

    Typ. output characteristics I =f =25 ° parameter 0 0.5 0.4 0.3 0.2 0 Typ. transfer characteristics I =f(V ); ...

  • Page 6

    Drain-source on-state resistance R =f =0. DS(on % -60 - Typ. capacitances C =f MHz ...

  • Page 7

    Typ. gate charge V =f =0.23 A pulsed GS gate D parameter 0.2 0.4 Q gate Rev. 2.82 14 Drain-source breakdown voltage V =f(T BR(DSS) ...

  • Page 8

    Package Outline: Footprint: Dimensions in mm Rev. 2.82 Packaging: page 8 BSS138N 2009-02-11 ...

  • Page 9

    ... Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...