BSS83PE6327 Infineon Technologies, BSS83PE6327 Datasheet
BSS83PE6327
Specifications of BSS83PE6327
BSS83PE6327XT
BSS83PE6327XTINTR
BSS83PE6327XTINTR
SP000012075
Related parts for BSS83PE6327
BSS83PE6327 Summary of contents
Page 1
SIPMOS Small-Signal-Transistor Features P-Channel Enhancement mode Avalanche rated Logic Level rated Type Package BSS 83 P SOT-23 Maximum Ratings, °C, unless otherwise specified j Parameter Continuous drain current °C A ...
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Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point ( Pin 3 ) SMD version, device on PCB: @ min. footprint cooling area Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max D Input capacitance - MHz GS DS Output capacitance ...
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Electrical Characteristics Parameter Dynamic Characteristics Gate to source charge -0. Gate to drain charge -0. Gate charge total V = ...
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Power Dissipation tot A BSS 83 P 0.38 W 0.32 0.28 0.24 0.20 0.16 0.12 0.08 0.04 0. Safe operating area ...
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Typ. output characteristics parameter µs p BSS 83 P -0. tot -0.60 -0.50 -0.40 -0.30 -0.20 ...
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Drain-source on-resistance DS(on) j parameter : I = -0. BSS 83 P 5.5 4.5 4.0 3.5 3.0 98% 2.5 2.0 typ 1.5 1.0 0.5 0.0 -60 - Typ. capacitances ...
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Avalanche Energy parameter -0. 105 Drain-source breakdown voltage V ...
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