BSS83PE6327 Infineon Technologies, BSS83PE6327 Datasheet - Page 6

• Manufacturer Part Number: BSS83PE6327
• Description: MOSFET P-CH 60V 330MA SOT-23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS83PE6327

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2 Ohm @ 330mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 330mA
• Vgs(th) (max) @ Id: 2V @ 80µA
• Gate Charge (qg) @ Vgs: 3.57nC @ 10V
• Input Capacitance (ciss) @ Vds: 78pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSS83PE6327INTR; BSS83PE6327XT; BSS83PE6327XTINTR; BSS83PE6327XTINTR; SP000012075

Typ. output characteristics
I
parameter: t
Typ. transfer characteristics I
V
parameter: t
D
DS
= f ( V
-0.80
-0.60
-0.50
-0.40
-0.30
-0.20
-0.10
0.00
-1.2
-1.0
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
A
A
0.0
0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0
0.0
2 x I
BSS 83 P
DS
P
tot
D
)
= 0W
-1.0
p
x R
p
j
i
h
k
g
l
f
= 80 µs
e
= 80 µs
d
DS(on)max
-2.0
-3.0
-4.0
D
c
a
= f ( V
b
V GS [V]
a
b
c
d
e
f
g
h
i
j
k
l
V
V
V
V
Preliminary data
-10.0
GS
DS
-2.5
-3.0
-3.5
-4.0
-4.5
-5.0
-5.5
-6.0
-6.5
-7.0
-8.0
GS
-6.0
-5.0
Page 6
)
Typ. drain-source-on-resistance
R
parameter: V
Typ. forward transconductance
g
parameter: g
fs
DS(on)
= f( I
0.70
0.60
0.55
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
S
6.5
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.00
0.00
D
BSS 83 P
a
V
= f ( I
-2.5
GS
); T
a
-0.10 -0.20 -0.30 -0.40 -0.50
[V] =
-0.10
-3.0
b
j
=25°C
D
fs
GS
)
-3.5
c
-0.20
-4.0
d
-4.5
e
b
-0.30
-5.0
f
-5.5
g
-0.40
-6.0
h
1999-09-16
-6.5
-0.50
BSS 83 P
i
j
-7.0
c
l
j
h
A
f
d
k
A
i
I
ID
g
D
-8.0
e
k
-0.70
-0.65
-10.0
l