BSS83PE6327 Infineon Technologies, BSS83PE6327 Datasheet - Page 8

• Manufacturer Part Number: BSS83PE6327
• Description: MOSFET P-CH 60V 330MA SOT-23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS83PE6327

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2 Ohm @ 330mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 330mA
• Vgs(th) (max) @ Id: 2V @ 80µA
• Gate Charge (qg) @ Vgs: 3.57nC @ 10V
• Input Capacitance (ciss) @ Vds: 78pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSS83PE6327INTR; BSS83PE6327XT; BSS83PE6327XTINTR; BSS83PE6327XTINTR; SP000012075

Avalanche Energy E
parameter: I
R
Drain-source breakdown voltage
V
(BR)DSS
GS
mJ
V
-72
-68
-66
-64
-62
-60
-58
-56
-54
10
= 25
8
7
6
5
4
3
2
1
0
-60
25
BSS 83 P
= f ( T
45
-20
D
= -0.33 A , V
j
)
65
20
85
AS
60
= f ( T
105
DD
100
j
125
)
= -25 V
°C
°C
T
Preliminary data
T
j
j
165
180
Page 8
Typ. gate charge
V
parameter: I
GS
V
-16
-12
-10
= f ( Q
-8
-6
-4
-2
0
0.0
BSS 83 P
0.4
Gate
D
0,2
0.8
= -0.33 A pulsed
)
V
DS max
1.2
1.6
2.0
2.4
1999-09-16
0,8
BSS 83 P
2.8
V
DS max
nC
Q
Gate
3.4