BSS83PE6327 Infineon Technologies, BSS83PE6327 Datasheet - Page 5

• Manufacturer Part Number: BSS83PE6327
• Description: MOSFET P-CH 60V 330MA SOT-23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS83PE6327

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2 Ohm @ 330mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 330mA
• Vgs(th) (max) @ Id: 2V @ 80µA
• Gate Charge (qg) @ Vgs: 3.57nC @ 10V
• Input Capacitance (ciss) @ Vds: 78pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSS83PE6327INTR; BSS83PE6327XT; BSS83PE6327XTINTR; BSS83PE6327XTINTR; SP000012075

Power Dissipation
P
Safe operating area
I
parameter : D = 0 , T
D
tot
= f ( V
-10
-10
-10
-10
-10
W
0.38
0.32
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0.00
A
= f ( T
-1
-2
-3
1
0
-10
0
BSS 83 P
BSS 83 P
DS
-1
A
20
)
)
40
-10
60
0
A
= 25 °C
80
100
-10
120
1
°C
DC
V
T
V
t p = 88.0µs
Preliminary data
A
DS
160
100 µs
1 ms
10 ms
-10
Page 5
2
Drain current
I
parameter: V
Transient thermal impedance
Z
parameter : D = t
D
thJC
K/W
= f ( T
-0.36
-0.28
-0.24
-0.20
-0.16
-0.12
-0.08
-0.04
10
0.00
10
10
10
10
A
-1
= f ( t
3
2
1
0
10
0
BSS 83 P
BSS 83 P
A
-5
)
10
20
p
single pulse
)
-4
GS
10
40
-3
p
10
10 V
/ T
60
-2
10
80
-1
10
100
0
10
1
120
1999-09-16
BSS 83 P
10
D = 0.50
2
°C
0.20
0.10
0.05
0.02
0.01
T
t
p
A
s
160
10
4