BSS126 E6906 Infineon Technologies, BSS126 E6906 Datasheet - Page 5

• Manufacturer Part Number: BSS126 E6906
• Description: MOSFET N-CH 600V 21MA SOT-23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS126 E6906

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 500 Ohm @ 16mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 21mA
• Vgs(th) (max) @ Id: 1.6V @ 8µA
• Gate Charge (qg) @ Vgs: 2.1nC @ 5V
• Input Capacitance (ciss) @ Vds: 28pF @ 25V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSS126E6906XT; SP000055448

Rev. 1.6
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
D
D
=f(V
=f(V
0.025
0.015
0.005
0.02
0.01
0.04
0.03
0.02
0.01
DS
GS
0
0
-2
); T
0
); V
j
=25 °C
DS
GS
=3 V; T
4
-1
j
=25 °C
V
V
GS
DS
8
[V]
[V]
0
12
V 0.2-
V 0.1
V 0.1-
V 0
V 0.2
V 0.5
V 10
V 1
page 5
16
1
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
0.025
0.015
0.005
1000
0.02
0.01
900
800
700
600
500
400
300
200
100
D
0
=f(I
0.000
0
); T
0
D
j
); T
=25 °C
GS
j
=25 °C
0.005
0.01
-0.2 V
-0.1 V
I
I
0.010
D
0.02
D
0 V 0.1 V 0.2 V
[A]
[A]
0.015
0.03
0.5 V
BSS126
10 V
1 V
0.020
2009-08-18
0.04