SPP80N08S2L-07 Infineon Technologies, SPP80N08S2L-07 Datasheet - Page 2

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SPP80N08S2L-07

Manufacturer Part Number
SPP80N08S2L-07
Description
MOSFET N-CH 75V 80A TO-220
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of SPP80N08S2L-07

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7.1 mOhm @ 67A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
233nC @ 10V
Input Capacitance (ciss) @ Vds
6820pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
SP000012476
SPP80N08S2L07

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SPP80N08S2L-07
Manufacturer:
INFINEON
Quantity:
15 000
Part Number:
SPP80N08S2L-07
Manufacturer:
INFINEON
Quantity:
12 500
Electrical Characteristics, at T
Parameter
Static Characteristics
Drain-source breakdown voltage
V
Gate threshold voltage, V
I
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-source on-state resistance
V
V
Drain-source on-state resistance
V
V
1 Current limited by bondwire ; with an R
information see app.-note ANPS071E available at www.infineon.com/optimos
2 Defined by design. Not subject to production test.
3 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4 Diagrams are related to straight lead versions
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
D
GS
DS
DS
GS
GS
GS
GS
GS
=250µA
=0V, I
=75V, V
=75V, V
=20V, V
=4.5V, I
=4.5V, I
=10V, I
=10V, I
2
cooling area
D
D
D
=1mA
GS
GS
DS
D
D
=67A
=67A, SMD version
=67A
=67A, SMD version
=0V, T
=0V, T j =125°C
=0V
j
3)
=25°C
GS
2)
= V
DS
j
4)
thJC
= 25 °C, unless otherwise specified
= 0.5K/W the chip is able to carry I
Page 2
Symbol
V
V
I
I
R
R
Symbol
R
R
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
DS(on)
thJC
thJA
thJA
min.
min.
1.2
75
-
-
-
-
-
-
-
-
-
-
-
D
= 135A at 25°C, for detailed
Values
Values
0.01
SPB80N08S2L-07
SPP80N08S2L-07
typ.
typ.
1.6
6.5
6.2
5.3
0.3
1
1
5
-
-
-
-
max.
max.
100
100
8.7
7.1
6.8
0.5
62
62
40
2003-05-09
2
1
9
-
Unit
V
µA
nA
mΩ
Unit
K/W

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