SPP80N08S2L-07 Infineon Technologies, SPP80N08S2L-07 Datasheet - Page 3

• Manufacturer Part Number: SPP80N08S2L-07
• Description: MOSFET N-CH 75V 80A TO-220
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of SPP80N08S2L-07

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.1 mOhm @ 67A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 233nC @ 10V
• Input Capacitance (ciss) @ Vds: 6820pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000012476; SPP80N08S2L07

Electrical Characteristics
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
g
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
Symbol
d(on)
r
d(off)
f
S
SM
rr
fs
SD
iss
oss
rss
gs
gd
g
(plateau) V
rr
Page 3
V
I
V
f=1MHz
V
I
R
V
V
V
T
V
V
di
D
D
DS
GS
DD
G
DD
DD
GS
DD
C
GS
R
F
=80A
=80A,
=25°C
/dt=100A/µs
=1.1Ω
=40V, I
≥2*I
=0V, V
=0 to 10V
=0V, I
=40V, V
=60V, I
=60V, I
=60V, I
Conditions
D
*R
F =
F
DS
D
D
D
=80A
DS(on)max
GS
l
S
=80A
=80A,
=80A
=25V,
,
=10V,
,
min.
74
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SPB80N08S2L-07
SPP80N08S2L-07
Values
5130
typ.
148
993
415
186
197
0.9
3.3
25
81
76
78
18
66
81
-
-
2003-05-09
max.
6820 pF
1320
320
100
250
620
122
114
117
233
1.3
80
38
23
83
-
-
A
V
ns
nC
Unit
S
ns
nC
V