SPP80N08S2L-07 Infineon Technologies, SPP80N08S2L-07 Datasheet - Page 4

• Manufacturer Part Number: SPP80N08S2L-07
• Description: MOSFET N-CH 75V 80A TO-220
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of SPP80N08S2L-07

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.1 mOhm @ 67A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 233nC @ 10V
• Input Capacitance (ciss) @ Vds: 6820pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000012476; SPP80N08S2L07

1 Power dissipation
P
parameter: V
3 Safe operating area
I
parameter : D = 0.01 , T
D
tot
= f ( V
= f (T
10
10
10
10
320
240
200
160
120
W
A
80
40
0
3
2
1
0
10
0
SPP80N08S2L-07
SPP80N08S2L-07
DS
-1
C
20
)
)
GS
40
≥ 4 V
60
10
0
80
C
100 120 140 160
= 25 °C
10
1
V
T
V
°C
C
DS
t
p
= 3.7µs
190
10
10 µs
100 µs
1 ms
Page 4
2
2 Drain current
I
parameter: V
4 Max. transient thermal impedance
Z
parameter : D = t
D
thJC
= f (T
K/W
10
10
10
10
10
10
A
90
70
60
50
40
30
20
10
0
= f (t
-1
-2
-3
-4
0
1
0
10
C
SPP80N08S2L-07
SPP80N08S2L-07
)
-7
20
p
)
10
single pulse
GS
40
-6
≥ 10 V
10
p
60
/T
-5
80
10
SPB80N08S2L-07
SPP80N08S2L-07
-4
100 120 140 160
10
-3
10
2003-05-09
-2
D = 0.50
0.20
0.10
0.05
0.02
0.01
T
t
s
°C
p
C
190
10
0