SPP80N08S2L-07 Infineon Technologies, SPP80N08S2L-07 Datasheet - Page 7

• Manufacturer Part Number: SPP80N08S2L-07
• Description: MOSFET N-CH 75V 80A TO-220
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of SPP80N08S2L-07

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.1 mOhm @ 67A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 233nC @ 10V
• Input Capacitance (ciss) @ Vds: 6820pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000012476; SPP80N08S2L07

15 Drain-source breakdown voltage
V
parameter: I
13 Typ. avalanche energy
E
par.: I
(BR)DSS
AS
mJ
850
700
600
500
400
300
200
100
= f (T
V
92
88
86
84
82
80
78
76
74
72
70
68
D
-60
0
25
= 80 A , V
SPP80N08S2L-07
= f (T
j
)
45
-20
D
=10 mA
j
)
65
20
DD
85
= 25 V, R
60
105
100
125
GS
145
140
= 25 Ω
°C
°C
T
T
j
j
200
185
Page 7
14 Typ. gate charge
V
parameter: I
GS
= f (Q
V
16
12
10
8
6
4
2
0
0
SPP80N08S2L-07
Gate
40
D
= 80 A pulsed
)
80
0,2
120
V
DS max
SPB80N08S2L-07
SPP80N08S2L-07
160
0,8 V
200
DS max
2003-05-09
240
nC
Q
Gate
300