BLF6G21-10G,112 NXP Semiconductors, BLF6G21-10G,112 Datasheet - Page 3

• Manufacturer Part Number: BLF6G21-10G,112
• Description: TRANSISTOR PWR LDMOS SOT538A
• Manufacturer: NXP Semiconductors

Specifications of BLF6G21-10G,112

• Transistor Type: LDMOS
• Frequency: 2.11GHz ~ 2.17GHz
• Gain: 18.5dB
• Voltage - Rated: 65V
• Current Rating: 3.1A
• Current - Test: 100mA
• Voltage - Test: 28V
• Power - Output: 700mW
• Package / Case: SOT-538A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-5104-5; 934063436112; BLF6G21-10G,112

NXP Semiconductors
5. Thermal characteristics
6. Characteristics
Table 6.
T
7. Application information
BLF6G21-10G_2
Product data sheet
Symbol
V
V
I
I
I
g
R
C
DSS
DSX
GSS
j
fs
(BR)DSS
GS(th)
DS(on)
rs
= 25 C unless otherwise specified
Parameter
drain-source breakdown voltage
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
feedback capacitance
Characteristics
7.1 Ruggedness in class-AB operation
Table 5.
[1]
Table 7.
Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP
test model 1; 1-64 PDPCH; f
RF performance at V
class-AB production test circuit.
Table 8.
Mode of operation: 1-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP
test model 1; 1-64 PDPCH; f
I
The BLF6G21-10G is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
f = 2140 MHz at P
Symbol Parameter
R
Symbol
G
ACPR
Symbol
G
ACPR
Dq
D
D
th(j-case)
p
p
= 100 mA; T
Thermal resistance is determined under specified RF operating conditions
thermal resistance from junction to case T
Thermal characteristics
Application information
Application information
Parameter
power gain
drain efficiency
adjacent channel power ratio
Parameter
power gain
drain efficiency
adjacent channel power ratio
case
= 25 C; unless otherwise specified; in a class-AB production test circuit.
L
DS
= 10 W.
Rev. 02 — 11 December 2009
= 28 V; I
Conditions
V
V
V
V
V
V
V
V
GS
DS
GS
GS
GS
DS
GS
GS
1
1
= 10 V; I
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
= 0 V; V
= 2112.5 MHz; f
= 2112.5 MHz; f
Dq
GS(th)
GS(th)
= 100 mA; T
D
DS
DS
D
D
= 0.5 mA
+ 3.75 V; V
+ 3.75 V; I
DS
= 18 mA
= 0.9 A
= 28 V
= 28 V; f = 1 MHz
= 0 V
2
2
case
= 2117.5 MHz; f
= 2167.5 MHz; RF performance at V
D
DS
Conditions
P
P
P
Conditions
P
P
P
= 0.625 A
L(AV)
L(AV)
L(AV)
L(AV)
L(AV)
L(AV)
= 25 C; unless otherwise specified; in a
Conditions
= 10 V
case
= 0.7 W
= 0.7 W
= 0.7 W
= 2 W
= 2 W
= 2 W
= 80 C; P
3
= 2162.5 MHz; f
BLF6G21-10G
L(AV)
Min
65
1.4
-
-
-
-
-
-
Power LDMOS transistor
Min
-
-
-
Min
17.3 19.3
29
-
= 11 W
DS
Typ
-
1.9
-
3.1
-
0.5
0.4
0.5
Typ
18.5
15
Typ
31
= 28 V;
© NXP B.V. 2009. All rights reserved.
50
39
4
= 2167.5 MHz;
[1]
DS
Max
-
2.4
1.5
-
150
-
-
-
Max
-
-
-
Max
-
-
36
Typ
3.2
= 28 V;
Unit
dB
%
dBc
Unit
dB
%
dBc
3 of 11
Unit
V
V
A
nA
S
pF
Unit
K/W
A