BLF6G21-10G,112 NXP Semiconductors, BLF6G21-10G,112 Datasheet - Page 7

• Manufacturer Part Number: BLF6G21-10G,112
• Description: TRANSISTOR PWR LDMOS SOT538A
• Manufacturer: NXP Semiconductors

Specifications of BLF6G21-10G,112

• Transistor Type: LDMOS
• Frequency: 2.11GHz ~ 2.17GHz
• Gain: 18.5dB
• Voltage - Rated: 65V
• Current Rating: 3.1A
• Current - Test: 100mA
• Voltage - Test: 28V
• Power - Output: 700mW
• Package / Case: SOT-538A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-5104-5; 934063436112; BLF6G21-10G,112

NXP Semiconductors
BLF6G21-10G_2
Product data sheet
Fig 10. 2-carrier W-CDMA power gain as a function of
Fig 12. 2-carrier W-CDMA adjacent channel power
ACPR
(dBc)
(dB)
G
(1) f = 2.11 GHz
(2) f = 2.14 GHz
(3) f = 2.17 GHz
(1) f = 2.11 GHz
(2) f = 2.14 GHz
(3) f = 2.17 GHz
20.0
19.6
19.2
18.8
18.4
18.0
p
30
40
50
60
0
0
V
load power; typical values
V
ratio as a function of load power;
typical values
DS
DS
= 28 V; I
= 28 V; I
Dq
Dq
0.6
0.6
= 100 mA.
= 100 mA; carrier spacing 5 MHz.
1.2
1.2
(1)
(2)
(3)
(3)
(2)
(1)
P
P
L
L
001aal129
001aal131
(W)
(W)
Rev. 02 — 11 December 2009
1.8
1.8
Fig 11. 2-carrier W-CDMA drain efficiency as a
Fig 13. 2-carrier W-CDMA adjacent channel power
ACPR
(dBc)
(%)
(1) f = 2.11 GHz
(2) f = 2.14 GHz
(3) f = 2.17 GHz
(1) f = 2.11 GHz
(2) f = 2.14 GHz
(3) f = 2.17 GHz
D
30
20
10
40
45
50
55
60
0
0
V
function of load power; typical values
0
V
ratio as a function of load power;
typical values
DS
DS
= 28 V; I
= 28 V; I
Dq
Dq
0.6
0.6
= 100 mA.
= 100 mA; carrier spacing 10 MHz.
BLF6G21-10G
Power LDMOS transistor
(1)
(2)
(3)
1.2
1.2
© NXP B.V. 2009. All rights reserved.
P
P
L
L
001aal130
001aal132
(W)
(W)
(3)
(2)
(1)
1.8
1.8
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