PD55015TR-E STMicroelectronics, PD55015TR-E Datasheet - Page 3

TRANS RF N-CH FET POWERSO-10RF

PD55015TR-E

Manufacturer Part Number
PD55015TR-E
Description
TRANS RF N-CH FET POWERSO-10RF
Manufacturer
STMicroelectronics
Datasheets

Specifications of PD55015TR-E

Transistor Type
LDMOS
Frequency
500MHz
Gain
14dB
Voltage - Rated
40V
Current Rating
5A
Current - Test
150mA
Voltage - Test
12.5V
Power - Output
15W
Package / Case
PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
5A
Drain Source Voltage (max)
40V
Output Power (max)
15W(Min)
Power Gain (typ)@vds
14dB
Frequency (max)
1GHz
Package Type
PowerSO-10RF (Formed lead)
Pin Count
4
Forward Transconductance (typ)
2.5S
Input Capacitance (typ)@vds
89@12.5VpF
Output Capacitance (typ)@vds
60@12.5VpF
Reverse Capacitance (typ)
6.5@12.5VpF
Operating Temp Range
-65C to 165C
Drain Efficiency (typ)
55%
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
73000mW
Vswr (max)
20(Min)
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
497-10097-2
PD55015TR-E

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PD55015TR-E
Manufacturer:
ST
Quantity:
2 000
Part Number:
PD55015TR-E
Manufacturer:
ST
0
Part Number:
PD55015TR-E
Manufacturer:
ST
Quantity:
20 000
PD55025-E, PD55025S-E
1
1.1
1.2
Electrical data
Maximum ratings
Table 2.
Thermal data
Table 3.
V
Symbol
Symbol
(BR)DSS
P
R
T
V
DISS
T
STG
thJC
I
GS
D
J
Absolute maximum ratings (T
Thermal data
Drain-source voltage
Gate-source voltage
Drain current
Power dissipation (@ T
Max. operating junction temperature
Storage temperature
Junction - case thermal resistance
Doc ID 12330 Rev 2
Parameter
Parameter
C
= 70°C)
CASE
= 25°C)
-65 to +150
Value
Value
± 20
165
1.2
40
79
7
Electrical data
°C/W
Unit
Unit
°C
°C
W
V
V
A
3/23

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