PD55015TR-E STMicroelectronics, PD55015TR-E Datasheet - Page 8

• Manufacturer Part Number: PD55015TR-E
• Description: TRANS RF N-CH FET POWERSO-10RF
• Manufacturer: STMicroelectronics

Specifications of PD55015TR-E

• Transistor Type: LDMOS
• Frequency: 500MHz
• Gain: 14dB
• Voltage - Rated: 40V
• Current Rating: 5A
• Current - Test: 150mA
• Voltage - Test: 12.5V
• Power - Output: 15W
• Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 5A
• Drain Source Voltage (max): 40V
• Output Power (max): 15W(Min)
• Power Gain (typ)@vds: 14dB
• Frequency (max): 1GHz
• Package Type: PowerSO-10RF (Formed lead)
• Pin Count: 4
• Forward Transconductance (typ): 2.5S
• Input Capacitance (typ)@vds: 89@12.5VpF
• Output Capacitance (typ)@vds: 60@12.5VpF
• Reverse Capacitance (typ): 6.5@12.5VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 55%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 73000mW
• Vswr (max): 20(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-10097-2; PD55015TR-E

Typical performance
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Figure 11. Output power vs bias current
Figure 13. Output power vs supply voltage
40
35
30
25
20
15
10
35
30
25
20
15
10
5
0
5
0
0
5
200
7
9
400
11
Idq (m A)
Vdd (V)
600
13
520 MHz
800
480 MHz
520 MHz
15
Vdd = 12.5 V
P in = 0.85 W
480 MHz
500 MHz
Idq = 200 m A
P in = 0.85 W
1000
500 MHz
17
Doc ID 12330 Rev 2
1200
19
Figure 12. Drain efficiency vs bias current
Figure 14. Drain efficiency vs supply voltage
60
50
40
30
20
10
70
60
50
40
30
20
10
0
0
6
0
200
8
400
10
500 MHz
520 MHz
Idq (m A)
Vdd (V)
PD55025-E, PD55025S-E
600
12
500 MHz
800
14
500 MHz
520 MHz
Idq = 200 m A
Pin = 0.85 W
Vdd = 12.5 V
Pin = 0.85 W
1000
16
480 MHz
1200
18