PD55015TR-E STMicroelectronics, PD55015TR-E Datasheet - Page 6

• Manufacturer Part Number: PD55015TR-E
• Description: TRANS RF N-CH FET POWERSO-10RF
• Manufacturer: STMicroelectronics

Specifications of PD55015TR-E

• Transistor Type: LDMOS
• Frequency: 500MHz
• Gain: 14dB
• Voltage - Rated: 40V
• Current Rating: 5A
• Current - Test: 150mA
• Voltage - Test: 12.5V
• Power - Output: 15W
• Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 5A
• Drain Source Voltage (max): 40V
• Output Power (max): 15W(Min)
• Power Gain (typ)@vds: 14dB
• Frequency (max): 1GHz
• Package Type: PowerSO-10RF (Formed lead)
• Pin Count: 4
• Forward Transconductance (typ): 2.5S
• Input Capacitance (typ)@vds: 89@12.5VpF
• Output Capacitance (typ)@vds: 60@12.5VpF
• Reverse Capacitance (typ): 6.5@12.5VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 55%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 73000mW
• Vswr (max): 20(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-10097-2; PD55015TR-E

Typical performance
4
6/23
Figure 3.
Figure 5.
1000
1.04
1.02
1.00
0.98
0.96
0.94
100
10
1
-25
0
f = 1 MHz
Vds = 10 V
Typical performance
4
Capacitance vs supply voltage
Gate-source voltage vs
case temperature
0
8
25
12
C rs s
C is s
C os s
Vds (V)
Vgs (V)
16
50
20
Id = .5 A
Id = 5 A
75
24
Id = 3 A
Id = 2 A
Id = 1 A
Id = 4 A
Doc ID 12330 Rev 2
100
28
Figure 4.
Figure 6.
45
40
35
30
25
20
15
10
5
0
6
5
4
3
2
1
0
0.00
2.0
Vds = 10 V
2.5
1.00
Drain current vs gate source
voltage
Output power vs input power
3.0
2.00
3.5
480 MHz
P in (W )
Vgs (V)
PD55025-E, PD55025S-E
3.00
4.0
4.00
500 MHz
520 MHz
4.5
Vdd = 12.5 V
Idq = 200 m A
5.00
5.0
6.00
5.5