BF1207,115 NXP Semiconductors, BF1207,115 Datasheet

MOSFET N-CH DUAL GATE 6V UMT6

BF1207,115

Manufacturer Part Number
BF1207,115
Description
MOSFET N-CH DUAL GATE 6V UMT6
Manufacturer
NXP Semiconductors
Datasheet
1.BF1207115.pdf (22 pages)

Specifications of BF1207,115

Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
N-Channel Dual Gate
Frequency
400MHz
Gain
30dB
Voltage - Rated
6V
Current Rating
30mA
Noise Figure
1.3dB
Current - Test
18mA
Voltage - Test
5V
Configuration
Dual Dual Gate
Continuous Drain Current
30 mA
Drain-source Breakdown Voltage
6 V
Gate-source Breakdown Voltage
6 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
180 mW
Transistor Polarity
N-Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934058936115
BF1207 T/R
BF1207 T/R
1. Product profile
CAUTION
MSC895
1.1 General description
1.2 Features
1.3 Applications
The BF1207 is a combination of two dual gate MOSFET amplifiers with shared source
and gate2 leads and an integrated switch.
The source and substrate are interconnected. Internal bias circuits enable Direct Current
(DC) stabilization and a very good cross-modulation performance during Automatic Gain
Control (AGC). Integrated diodes between the gates and source protect against excessive
input voltage surges. The BF1207 has a SOT363 micro-miniature plastic package.
BF1207
Dual N-channel dual gate MOSFET
Rev. 01 — 28 July 2005
Two low noise gain controlled amplifiers in a single package. One with a fully
integrated bias and one with partly integrated bias
Internal switch to save external components
Superior cross-modulation performance during AGC
High forward transfer admittance
High forward transfer admittance to input capacitance ratio
Gain controlled low noise amplifiers for Very High Frequency (VHF) and Ultra High
Frequency (UHF) applications with 5 V supply voltage, such as digital and analog
television tuners and professional communication equipment
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Product data sheet

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BF1207,115 Summary of contents

Page 1

BF1207 Dual N-channel dual gate MOSFET Rev. 01 — 28 July 2005 1. Product profile 1.1 General description The BF1207 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The ...

Page 2

Philips Semiconductors 1.4 Quick reference data Table 1: Per MOSFET unless otherwise specified. Symbol Parameter tot iss(G1) C rss NF Xmod Pinning information Table 2: Pin ...

Page 3

Philips Semiconductors 3. Ordering information Table 3: Type number BF1207 4. Marking Table 4: Type number BF1207 [ Made in Hong Kong Made in Malaysia Made in China. 5. Limiting values ...

Page 4

Philips Semiconductors Fig 1. Power derating curve 6. Thermal characteristics Table 6: Symbol R th(j-sp) 7. Static characteristics Table 7: Static characteristics Symbol Parameter Per MOSFET; unless otherwise specified V drain-source breakdown voltage (BR)DSS V ...

Page 5

Philips Semiconductors Table 7: Static characteristics Symbol Parameter I gate1 cut-off current G1-S I gate2 cut-off current G2-S [1] R connects gate1 ( (see G1 GG [2] R connects gate1 ...

Page 6

Philips Semiconductors 8. Dynamic characteristics 8.1 Dynamic characteristics for amplifier A Table 8: Dynamic characteristics for amplifier A Common source amb Symbol Parameter y forward transfer admittance fs C input capacitance at gate1 iss(G1) C ...

Page 7

Philips Semiconductors 8.1.1 Graphs for amplifi (mA 0.4 0.8 ( G2-S ( 3.5 V. G2-S ( G2-S (4) ...

Page 8

Philips Semiconductors (mS (5) ( G2-S ( 3.5 V. G2-S ( G2-S ( 2.5 V. G2-S ...

Page 9

Philips Semiconductors 120 V unw (dB V) 110 100 DS(A) DS(B) G1-S( MHz see unw amb Fig 9. Amplifier A: unwanted ...

Page 10

Philips Semiconductors (mS DS(A) G2 mA. D(A) Fig 12. Amplifier ...

Page 11

Philips Semiconductors 8.1.2 Scattering parameters for amplifier A Table DS(A) f (MHz) 50 100 200 300 400 500 600 700 800 900 1000 9397 750 14955 Product data sheet Scattering parameters for amplifier A ...

Page 12

Philips Semiconductors 8.2 Dynamic characteristics for amplifier B Table 10: Dynamic characteristics for amplifier B Common source amb Symbol Parameter y forward transfer admittance fs C input capacitance at gate1 iss(G1) C input capacitance at ...

Page 13

Philips Semiconductors 8.2.1 Graphs for amplifi (mA 0.4 0.8 ( G2-S ( 3.5 V. G2-S ( G2-S ( 2.5 V. ...

Page 14

Philips Semiconductors (mS (5) ( G2-S ( 3.5 V. G2-S ( G2-S ( 2.5 V. G2-S ...

Page 15

Philips Semiconductors 120 V unw (dB V) 110 100 DS(B) GG DS( 150 k (connected to V G1( MHz ...

Page 16

Philips Semiconductors (mS DS(B) G2 mA. D(B) Fig ...

Page 17

Philips Semiconductors 8.2.2 Scattering parameters for amplifier B Table 11 DS(B) f (MHz) 50 100 200 300 400 500 600 700 800 900 1000 9397 750 14955 Product data sheet Scattering parameters for amplifier B ...

Page 18

Philips Semiconductors 9. Test information R GEN Fig 29. Cross-modulation test set-up for amplifi GEN 50 Fig 30. Cross-modulation test set-up for amplifier B 9397 750 14955 Product data sheet V AGC 10 k 4.7 nF G1B 4.7 ...

Page 19

Philips Semiconductors 10. Package outline Plastic surface mounted package; 6 leads y 6 pin 1 index DIMENSIONS (mm are the original dimensions UNIT max 0.30 1.1 0.25 mm 0.1 0.20 0.8 0.10 ...

Page 20

Philips Semiconductors 11. Revision history Table 12: Revision history Document ID Release date BF1207_1 20050728 9397 750 14955 Product data sheet Data sheet status Change notice Product data sheet - Rev. 01 — 28 July 2005 BF1207 Dual N-channel dual ...

Page 21

Philips Semiconductors 12. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. ...

Page 22

Philips Semiconductors 17. Contents 1 Product profi 1.1 General description ...

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