BF1208,115 NXP Semiconductors, BF1208,115 Datasheet - Page 13

• Manufacturer Part Number: BF1208,115
• Description: MOSFET N-CH DUAL GATE SSMINI-6
• Manufacturer: NXP Semiconductors

Specifications of BF1208,115

• Package / Case: SS Mini-6 (SOT-666)
• Transistor Type: N-Channel Dual Gate
• Frequency: 400MHz
• Gain: 32dB
• Voltage - Rated: 6V
• Current Rating: 30mA
• Noise Figure: 1.3dB
• Current - Test: 19mA
• Voltage - Test: 5V
• Configuration: Dual Common Source
• Continuous Drain Current: 30 mA
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 180 mW
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934058529115; BF1208 T/R; BF1208 T/R

Philips Semiconductors
9397 750 14254
Product data sheet
Fig 19. Amplifier B: gate1 current as a function of
Fig 21. Amplifier B: drain current as a function of gate1
(mA)
( A)
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
(7) V
I
G1
I
D
100
80
60
40
20
24
16
0
8
0
V
gate1 voltage; typical values
V
T
current; typical values
0
0
j
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
DS(B)
DS(B)
= 25 C.
= 4 V.
= 3.5 V.
= 3 V.
= 2.5 V.
= 2 V.
= 1.5 V.
= 1 V.
= 5 V; V
= 5 V; V
0.4
10
DS(A)
G2-S
0.8
20
= 4 V; V
= V
G1-S(A)
1.2
DS(A)
30
= 0 V; T
= V
G1-S(A)
1.6
40
V
(1)
j
001aaa570
001aaa572
I
= 25 C.
G1
G1-S
( A)
(2)
= 0 V;
(3)
(4)
(5)
(6)
(7)
(V)
50
Rev. 01 — 16 March 2005
2
Fig 20. Amplifier B: forward transfer admittance as a
Fig 22. Amplifier B: drain current as a function of gate1
(mS)
(mA)
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
(7) V
y
I
D
fs
40
30
20
10
16
12
0
8
4
0
V
function of drain current; typical values
V
T
Figure
supply voltage; typical values
0
0
j
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
DS(B)
DS(B)
= 25 C; R
(7)
= 4 V.
= 3.5 V.
= 3 V.
= 2.5 V.
= 2 V.
= 1.5 V.
= 1 V.
= 5 V; V
= 5 V; V
3.
1
8
Dual N-channel dual gate MOSFET
G1
DS(A)
G2-S
= 150 k (connected to V
(6)
2
= 4 V; V
= V
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
16
G1-S(A)
DS(A)
(5)
3
= 0 V; T
= V
24
(4)
G1-S(A)
4
I
j
001aaa571
D
001aaa573
(3)
V
BF1208
= 25 C.
GG
(mA)
GG
(1)
(2)
= 0 V;
(V)
); see
32
5
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