BF1208,115 NXP Semiconductors, BF1208,115 Datasheet - Page 22

• Manufacturer Part Number: BF1208,115
• Description: MOSFET N-CH DUAL GATE SSMINI-6
• Manufacturer: NXP Semiconductors

Specifications of BF1208,115

• Package / Case: SS Mini-6 (SOT-666)
• Transistor Type: N-Channel Dual Gate
• Frequency: 400MHz
• Gain: 32dB
• Voltage - Rated: 6V
• Current Rating: 30mA
• Noise Figure: 1.3dB
• Current - Test: 19mA
• Voltage - Test: 5V
• Configuration: Dual Common Source
• Continuous Drain Current: 30 mA
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 180 mW
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934058529115; BF1208 T/R; BF1208 T/R

Philips Semiconductors
16. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
8.1
8.1.1
8.1.2
8.1.3
8.2
8.2.1
8.2.2
8.2.3
9
10
11
12
13
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 3
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Static characteristics. . . . . . . . . . . . . . . . . . . . . 4
Dynamic characteristics . . . . . . . . . . . . . . . . . . 5
Test information . . . . . . . . . . . . . . . . . . . . . . . . 18
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 19
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 20
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 21
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Contact information . . . . . . . . . . . . . . . . . . . . 21
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 2
Dynamic characteristics for amplifier A. . . . . . . 5
Graphics for amplifier A . . . . . . . . . . . . . . . . . . 6
Scattering parameters for amplifier A . . . . . . . 10
Noise data for amplifier A . . . . . . . . . . . . . . . . 10
Dynamic characteristics for amplifier B. . . . . . 11
Graphics for amplifier B . . . . . . . . . . . . . . . . . 12
Scattering parameters for amplifier B . . . . . . . 17
Noise data for amplifier B . . . . . . . . . . . . . . . . 17
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Published in The Netherlands
Dual N-channel dual gate MOSFET
Document number: 9397 750 14254
Date of release: 16 March 2005
BF1208