BF1208,115 NXP Semiconductors, BF1208,115 Datasheet - Page 8

• Manufacturer Part Number: BF1208,115
• Description: MOSFET N-CH DUAL GATE SSMINI-6
• Manufacturer: NXP Semiconductors

Specifications of BF1208,115

• Package / Case: SS Mini-6 (SOT-666)
• Transistor Type: N-Channel Dual Gate
• Frequency: 400MHz
• Gain: 32dB
• Voltage - Rated: 6V
• Current Rating: 30mA
• Noise Figure: 1.3dB
• Current - Test: 19mA
• Voltage - Test: 5V
• Configuration: Dual Common Source
• Continuous Drain Current: 30 mA
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 180 mW
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934058529115; BF1208 T/R; BF1208 T/R

Philips Semiconductors
9397 750 14254
Product data sheet
Fig 8. Amplifier A: drain current of amplifier A as a
Fig 10. Amplifier A: unwanted voltage for 1 %
(dB V)
(mA)
V
I
unw
D
120
110
100
20
16
12
90
80
8
4
0
V
R
function of supply voltage of A and B amplifier;
typical values
V
f
cross-modulation as a function of gain
reduction; typical values
unw
0
0
DS(A)
DS(A)
G1
= 60 MHz; T
= 150 k (connected to ground); see
= V
= V
10
1
DS(B)
DS(B)
= V
= 5 V; V
amb
20
supply
2
= 25 C; see
G1-S(B)
; V
G2-S
30
3
= 0 V; f
= 4 V; T
Figure
gain reduction (dB)
40
4
w
V
001aaa558
001aac195
supply
j
= 50 MHz;
= 25 C;
33.
Figure
(V)
50
Rev. 01 — 16 March 2005
5
3.
Fig 9. Amplifier A: drain current as a function of gate2
Fig 11. Amplifier A: gain reduction as a function of
reduction
(mA)
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
gain
(dB)
I
D
32
24
16
10
20
30
40
50
8
0
0
V
T
voltage; typical values
V
see
AGC voltage; typical values
0
0
j
DS(B)
DS(B)
DS(B)
DS(B)
DS(B)
DS(B)
DS(A)
DS(A)
= 25 C.
Figure
= 5 V.
= 4.5 V.
= 4 V.
= 3.5 V.
= 3 V.
= 2.5 V.
= 5 V; V
= V
DS(B)
33.
1
Dual N-channel dual gate MOSFET
G1-S(B)
= 5 V; V
2
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
= 0 V; gate1 (A) = open;
G1-S(B)
2
= 0 V; f = 50 MHz;
4
3
V
G2-S
V
001aaa559
001aac196
AGC
BF1208
(1)
(2)
(3)
(4)
(5)
(6)
(V)
(V)
6
4
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