BLF881,112 NXP Semiconductors, BLF881,112 Datasheet - Page 3

• Manufacturer Part Number: BLF881,112
• Description: TRANSISTOR PWR UHF LDMOS SOT467C
• Manufacturer: NXP Semiconductors

Specifications of BLF881,112

• Transistor Type: LDMOS
• Frequency: 860MHz
• Gain: 21dB
• Voltage - Rated: 104V
• Voltage - Test: 50V
• Package / Case: SOT467C
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 104V
• Output Power (max): 140W(Typ)
• Power Gain (typ)@vds: 21@50VdB
• Frequency (max): 860MHz
• Package Type: LDMOST
• Pin Count: 3
• Drain Source Resistance (max): 210(Typ)@6.15Vmohm
• Input Capacitance (typ)@vds: 100@50VpF
• Output Capacitance (typ)@vds: 33.5@50VpF
• Reverse Capacitance (typ): 1@50VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 49%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB/DVB-T
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Power - Output: -
• Noise Figure: -
• Current - Test: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934063947112

NXP Semiconductors
4. Limiting values
5. Thermal characteristics
6. Characteristics
Table 6.
T
[1]
Table 7.
T
BLF881_BLF881S
Product data sheet
Symbol
V
V
I
I
I
R
C
C
C
Symbol
2-Tone, class AB
V
I
P
G
η
IMD3
DSS
DSX
GSS
Dq
j
h
D
(BR)DSS
GS(th)
DS
L(PEP)
DS(on)
iss
oss
rss
p
= 25
= 25
I
D
is the drain current.
°
°
C unless otherwise specified.
C unless otherwise specified.
DC characteristics
Parameter
drain-source breakdown voltage
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
drain-source on-state resistance
input capacitance
output capacitance
reverse transfer capacitance
RF characteristics
third-order intermodulation distortion
Parameter
drain-source voltage
quiescent drain current
peak envelope power load power
power gain
drain efficiency
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
[1]
Symbol
V
V
T
Symbol
R
T
stg
j
DS
GS
th(j-c)
R
th(j-c)
is measured under RF conditions.
Limiting values
Thermal characteristics
Parameter
thermal resistance from junction to case
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 7 December 2010
Conditions
V
V
V
V
V
V
V
V
V
GS
DS
GS
GS
GS
GS
GS
GS
GS
Conditions
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 10 V; V
= V
= 0 V; V
= 0 V; V
= 0 V; V
GSth
GSth
D
+ 3.75 V; V
+ 3.75 V; I
DS
DS
DS
DS
D
= 1.35 mA
DS
= 135 mA
= 50 V
= 50 V; f = 1 MHz
= 50 V; f = 1 MHz
= 50 V; f = 1 MHz
= 0 V
Conditions
D
DS
= 4.5 A
= 10 V
BLF881; BLF881S
Conditions
P
T
case
L(AV)
UHF power LDMOS transistor
[1]
[1]
[1]
= 80 °C;
= 70 W
Min
-
-
-
20
45
-
Min
104
1.4
-
19
-
-
-
-
-
Min
-
−0.5
−65
-
Typ
50
0.5
140
21
49
−34
© NXP B.V. 2010. All rights reserved.
Typ
-
-
-
21
-
210
100
33.5
1
[1]
Max
104
+13
+150
200
Max
-
-
-
-
-
−30
Typ
0.95
Max
-
2.4
1.4
-
140
-
-
-
-
Unit
V
V
°C
°C
Unit
V
A
W
dB
%
dBc
Unit
K/W
Unit
V
V
μA
A
nA
mΩ
pF
pF
pF
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