BLF881S,112 NXP Semiconductors, BLF881S,112 Datasheet - Page 8

• Manufacturer Part Number: BLF881S,112
• Description: TRANSISTOR PWR UHF LDMOS SOT467B
• Manufacturer: NXP Semiconductors

Specifications of BLF881S,112

• Transistor Type: LDMOS
• Frequency: 860MHz
• Gain: 21dB
• Voltage - Rated: 104V
• Voltage - Test: 50V
• Package / Case: SOT467B
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 104V
• Output Power (max): 140W(Typ)
• Power Gain (typ)@vds: 21@50VdB
• Frequency (max): 860MHz
• Package Type: LDMOST
• Pin Count: 3
• Drain Source Resistance (max): 210(Typ)@6.15Vmohm
• Input Capacitance (typ)@vds: 100@50VpF
• Output Capacitance (typ)@vds: 33.5@50VpF
• Reverse Capacitance (typ): 1@50VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 49%
• Mounting: Surface Mount
• Mode Of Operation: 2-Tone Class-AB/DVB-T
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Power - Output: -
• Noise Figure: -
• Current - Test: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934063948112

NXP Semiconductors
BLF881_BLF881S
Product data sheet
7.4 Reliability
Fig 9.
(10) T
(11) T
(1) T
(2) T
(3) T
(4) T
(5) T
(6) T
(7) T
(8) T
(9) T
Years
10
10
10
10
10
10
TTF (0.1 % failure fraction).
The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %) × 1 / δ.
BLF881 electromigration
1
6
5
4
3
2
j
j
j
j
j
j
j
j
j
j
j
= 100 °C
= 110 °C
= 120 °C
= 130 °C
= 140 °C
= 150 °C
= 160 °C
= 170 °C
= 180 °C
= 190 °C
= 200 °C
0
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 7 December 2010
(7)
(1)
2
(2)
(8)
(3)
(9)
(4)
(10) (11)
(5)
(6)
BLF881; BLF881S
4
UHF power LDMOS transistor
I
DS(DC)
(A)
© NXP B.V. 2010. All rights reserved.
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