BLF278/01,112 NXP Semiconductors, BLF278/01,112 Datasheet - Page 12

• Manufacturer Part Number: BLF278/01,112
• Description: TRANSISTOR VHF PWR DMOS SOT262A1
• Manufacturer: NXP Semiconductors

Specifications of BLF278/01,112

• Transistor Type: 2 N-Channel (Dual)
• Frequency: 108MHz
• Gain: 22dB
• Voltage - Rated: 125V
• Current Rating: 18A
• Current - Test: 100mA
• Voltage - Test: 50V
• Power - Output: 300W
• Package / Case: SOT-262A1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934031850112

Philips Semiconductors
2003 Sep 19
handbook, halfpage
handbook, halfpage
VHF push-pull power MOS transistor
Class-B operation; V
R
Fig.14 Input impedance as a function of frequency
GS
( )
Z i
= 4
2
1
0
1
2
25
Fig.16 Definition of MOS impedance.
(series components); typical values per
section.
(per section); P
Z i
DS
= 50 V; I
75
L
= 300 W.
r i
x i
DQ
= 2
Z L
125
0.1 A;
MBA379
f (MHz)
MGE685
175
12
handbook, halfpage
handbook, halfpage
Class-B operation; V
R
Fig.15 Load impedance as a function of frequency
Class-B operation; V
R
Fig.17 Power gain as a function of frequency;
(dB)
GS
GS
G p
( )
Z L
= 4
= 4
30
20
10
8
6
4
2
0
0
25
25
(series components); typical values per
section.
typical values per section.
(per section); P
(per section); P
DS
DS
R L
= 50 V; I
= 50 V; I
75
75
L
L
= 300 W.
= 300 W.
DQ
DQ
= 2
= 2
X L
125
125
0.1 A;
0.1 A;
Product Specification
f (MHz)
f (MHz)
MGE686
BLF278
MGE687
175
175